SBOS852 September   2018 OPA859

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      High-Speed Time-of-Flight Receiver
      2.      Photodiode Capacitance vs Bandwidth and Noise
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input and ESD Protection
      2. 9.3.2 Feedback Pin
      3. 9.3.3 Wide Gain-Bandwidth Product
      4. 9.3.4 Slew Rate and Output Stage
      5. 9.3.5 Current Noise
    4. 9.4 Device Functional Modes
      1. 9.4.1 Split-Supply and Single-Supply Operation
      2. 9.4.2 Power-Down Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3.3 Wide Gain-Bandwidth Product

Figure 10 shows the open-loop magnitude and phase response of the OPA859. Calculate the gain bandwidth product of any op amp by determining the frequency at which the AOL is 40 dB and multiplying that frequency by a factor of 100. The open-loop response shows the OPA859 to have approximately 63° of phase-margin when configured as a unity-gain buffer.

Figure 51 shows the open-loop magnitude (AOL) of the OPA859 as a function of temperature. The results show approximately 5° of phase-margin variation over the entire temperature range. Semiconductor process variation is the naturally occurring variation in the attributes of a transistor (Early-voltage, β, channel-length and width) and other passive elements (resistors and capacitors) when fabricated into an integrated circuit. The process variation can occur across devices on a single wafer, or, across devices over multiple wafer lots over time. Typically the variation across a single wafer is tightly controlled. Figure 52 shows the AOL magnitude of the OPA859 as a function of process variation over time. The results show the AOL curve for the nominal process corner and the variation one standard deviation from the nominal. The simulated results show less than 2° of phase-margin difference within a standard deviation of process variation when the amplifier is configured as a unity-gain bufffer.

OPA859 D404_SBOS852.gifFigure 51. Open-Loop Gain vs Temperature
OPA859 D405_SBOS852.gifFigure 52. Open-Loop Gain vs Process Variation