SBOSAI7B November   2023  – July 2024 OPA2891 , OPA891

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information - OPA891
    5. 5.5 Thermal Information - OPA2891
    6. 5.6 Electrical Characteristics - RL = 150Ω
    7. 5.7 Electrical Characteristics - RL = 1kΩ
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Offset Nulling
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving a Capacitive Load
      2. 7.1.2 Low-Pass Filter Configurations
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Selection of Multiplexer
        2. 7.2.2.2 Signal Source
        3. 7.2.2.3 Driving Amplifier
        4. 7.2.2.4 Driving Amplifier Bandwidth Restriction
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 General PowerPAD™ Integrated Circuit Package Design Considerations
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DGN|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Overview

The OPAx891 is a high-speed operational amplifier configured in a voltage-feedback architecture. These amplifiers are built using a 36V, complementary bipolar process with NPN and PNP transistors that possess an fT of several GHz. This configuration results in exceptionally high-performance amplifiers with wide bandwidth, high slew rate, fast settling time, and low distortion.