SLOSEB4A November   2023  – July 2024 OPA2892 , OPA892

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Offset Nulling
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving a Capacitive Load
      2. 7.1.2 General Configuration
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 General PowerPAD™ Integrated Circuit Package Design Considerations
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information

THERMAL METRIC(1) OPA892 OPA2892 UNIT
D (SOIC) DGN (HVSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 124.5 52 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 65.0 75.2 °C/W
RθJB Junction-to-board thermal resistance 72.2 24.5 °C/W
ΨJT Junction-to-top characterization parameter 13.6 4 °C/W
ΨJB Junction-to-board characterization parameter 71.4 24.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 9.1 °C/W
For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.