The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs, such as leakage current errors, noise pick-up, and gain peaking as a result of stray capacitance. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation.
The 0.09 inch × 0.09 inch (2.29 mm × 2.29 mm) photodiode operates in the photoconductive mode for excellent linearity and low dark current.
The OPT101 operates from 2.7 V to 36 V supplies and quiescent current is only 120 μA. This device is available in clear plastic 8-pin PDIP, and J-lead SOP for surface mounting. The temperature range is 0°C to 70°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
OPT101 | PDIP (8) | 9.53 mm × 6.52 mm |
SOP (8) | 9.52 mm × 6.52 mm |
Changes from A Revision (October 2003) to B Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | VS | Power | Power supply of device. Apply 2.7 V to 36 V relative to –V pin. |
2 | –In | Input | Negative input of op amp and the cathode of the photodiode. Either do not connect, or apply additional op amp feedback. |
3 | –V | Power | Most negative power supply. Connect to ground or a negative voltage that meets the recommended operating conditions. |
4 | 1MΩ Feedback | Input | Connection to internal feedback network. Typically connect to Output, pin 5. |
5 | Output | Output | Output of device. |
6 | NC | — | Do not connect |
7 | NC | — | Do not connect |
8 | Common | Input | Anode of the photodiode. Typically, connect to ground. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage (VS to Common pin or –V pin) | 0 | 36 | V | |
Output short-circuit (to ground) | Continuous | |||
Temperature | Operating | –25 | 85 | °C |
Junction | 85 | °C | ||
Storage, Tstg | –25 | 85 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
POWER SUPPLY | |||||
Operating voltage | 2.7 | 36 | V | ||
TEMPERATURE | |||||
Specified | 0 | 70 | °C | ||
Operating | 0 | 70 | °C |
THERMAL METRIC(1) | OPT101 | UNIT | ||
---|---|---|---|---|
DTL (SOP) | NTC (PDIP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 138.6 | 128.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 96.4 | 113.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 126.6 | 107.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 17.8 | 24.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 118.8 | 105.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RESPONSIVITY | ||||||
Photodiode current | 0.45 | A/W | ||||
Voltage output | 0.45 | V/µW | ||||
Voltage output vs temperature | 100 | ppm/°C | ||||
Unit-to-unit variation | ±5% | |||||
Nonlinearity(1) | Full-scale (FS) output = 24 V | ±0.01 | % of FS | |||
Photodiode area | 0.090 in × 0.090 in | 0.008 | in2 | |||
2.29 mm × 2.29 mm | 5.2 | mm2 | ||||
DARK ERRORS, RTO(2) | ||||||
Offset voltage, output | 5 | 7.5 | 10 | mV | ||
Offset voltage vs temperature | ±10 | µV/°C | ||||
Offset voltage vs power supply | VS = 2.7 V to 36 V | 10 | 100 | µV/V | ||
Voltage noise, dark | fB = 0.1 Hz to 20 kHz, VS = 15 V, VPIN3 = –15 V | 300 | µVrms | |||
TRANSIMPEDANCE GAIN | ||||||
Resistor | 1 | MΩ | ||||
Tolerance | ±0.5% | ±2% | ||||
Tolerance vs temperature | ±50 | ppm/°C | ||||
FREQUENCY RESPONSE | ||||||
Bandwidth | VOUT = 10 VPP | 14 | kHz | |||
Rise and fall time | 10% to 90%, VOUT = 10-V step | 28 | µs | |||
Settling time | to 0.05%, VOUT = 10-V step | 160 | µs | |||
to 0.1%, VOUT = 10-V step | 80 | µs | ||||
to 1%, VOUT = 10-V step | 70 | µs | ||||
Overload recovery | 100%, return to linear operation | 50 | µs | |||
OUTPUT | ||||||
Voltage output, high | (VS) – 1.3 | (VS) – 1.15 | V | |||
Capacitive load, stable operation | 10 | nF | ||||
Short-circuit current | VS = 36 V | 15 | mA | |||
POWER SUPPLY | ||||||
Quiescent current | Dark, VPIN3 = 0 V | 120 | µA | |||
RL = ∞, VOUT = 10 V | 220 | µA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Photodiode area | 0.090 in × 0.090 in | 0.008 | in2 | |||
2.29 mm × 2.29 mm | 5.2 | mm2 | ||||
Current responsivity | λ = 650 nm | 0.45 | A/W | |||
865 | (µA/W)/cm2 | |||||
Dark current | VDIODE = 7.5 mV | 2.5 | pA | |||
Dark current vs temperature | VDIODE = 7.5 mV | Doubles every 7°C | — | |||
Capacitance | 1200 | pF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT | ||||||
Offset voltage | ±0.5 | mV | ||||
vs temperature | ±2.5 | µV/°C | ||||
vs power supply | 10 | µV/V | ||||
Input bias current | (–) input | 165 | pA | |||
vs temperature | (–) input | Doubles every 10°C | — | |||
Input impedance | Differential | 400 || 5 | MΩ || pF | |||
Common-mode | 250 || 35 | GΩ || pF | ||||
Common-mode input voltage range | Linear operation | 0 to (VS – 1) | V | |||
Common-mode rejection | 90 | dB | ||||
OPEN-LOOP GAIN | ||||||
Open-loop voltage gain | 90 | dB | ||||
FREQUENCY RESPONSE | ||||||
Gain bandwidth product(2) | 2 | MHz | ||||
Slew rate | 1 | V/µs | ||||
Settling time | 0.05% | 8.0 | µs | |||
0.1% | 7.7 | µs | ||||
1% | 5.8 | µs | ||||
OUTPUT | ||||||
Voltage output, high | (VS) – 1.3 | (VS) – 1.15 | V | |||
Short-circuit current | VS = 36 V | 15 | mA | |||
POWER SUPPLY | ||||||
Quiescent current | Dark, VPIN3 = 0 V | 120 | µA | |||
RL = ∞, VOUT = 10 V | 220 | µA |
VS = 15 V, VOUT – VPIN3 = 15 V |
CLOAD = 10,000 pF, pin 3 = 0 V |
VS = 15 V, VOUT – VPIN3 = 15 V |
CLOAD = 10,000 pF, Pin 3 = –15 V |