OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier

1 Features

Single Supply: 2.7 to 36 V
Photodiode Size: 0.090 inch × 0.090 inch
(2.29 mm × 2.29 mm)
Internal 1-MΩ Feedback Resistor
High Responsivity: 0.45 A/W (650 nm)
Bandwidth: 14 kHz at R_F = 1 MΩ
Low Quiescent Current: 120 μA
Packages: Clear Plastic 8-pin PDIP and J-Lead SOP

2 Applications

Medical Instrumentation
Laboratory Instrumentation
Position and Proximity Sensors
Photographic Analyzers
Barcode Scanners
Smoke Detectors
Currency Changers

3 Description

The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs, such as leakage current errors, noise pick-up, and gain peaking as a result of stray capacitance. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation.

The 0.09 inch × 0.09 inch (2.29 mm × 2.29 mm) photodiode operates in the photoconductive mode for excellent linearity and low dark current.

The OPT101 operates from 2.7 V to 36 V supplies and quiescent current is only 120 μA. This device is available in clear plastic 8-pin PDIP, and J-lead SOP for surface mounting. The temperature range is 0°C to 70°C.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
OPT101	PDIP (8)	9.53 mm × 6.52 mm
OPT101	SOP (8)	9.52 mm × 6.52 mm

For all available packages, see the package option addendum at the end of the data sheet.

Block Diagram

Spectral Responsivity

4 Revision History

Changes from A Revision (October 2003) to B Revision

Added Pin Functions, ESD Ratings, Recommended Operating Conditions, and Thermal information tables, and Parameter Measurement Information, Detailed Description, Application and Implementation, Power-Supply Recommendations, Layout, and Device and Documentation Support sections; moved existing sectionsGo
Deleted W version of device from Tolerance parameter of Electrical Characteristics table; W version now obsolete Go
Changed Application Information sectionGo

5 Pin Configuration and Functions

DTL and NTC Packages

8-pin SOP and 8-pin PDIP

Top View

1. Photodiode location.

Pin Functions

PIN		I/O	DESCRIPTION
NO.	NAME	I/O	DESCRIPTION
1	V_S	Power	Power supply of device. Apply 2.7 V to 36 V relative to –V pin.
2	–In	Input	Negative input of op amp and the cathode of the photodiode. Either do not connect, or apply additional op amp feedback.
3	–V	Power	Most negative power supply. Connect to ground or a negative voltage that meets the recommended operating conditions.
4	1MΩ Feedback	Input	Connection to internal feedback network. Typically connect to Output, pin 5.
5	Output	Output	Output of device.
6	NC	—	Do not connect
7	NC	—	Do not connect
8	Common	Input	Anode of the photodiode. Typically, connect to ground.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Supply voltage (V_S to Common pin or –V pin)		0	36	V
Output short-circuit (to ground)		Continuous
Temperature	Operating	–25	85	°C
	Junction		85	°C
	Storage, T_stg	–25	85	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
POWER SUPPLY
	Operating voltage	2.7	36	V
TEMPERATURE
	Specified	0	70	°C
	Operating	0	70	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		OPT101		UNIT
		DTL (SOP)	NTC (PDIP)
		8 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	138.6	128.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	96.4	113.1	°C/W
R_θJB	Junction-to-board thermal resistance	126.6	107.0	°C/W
ψ_JT	Junction-to-top characterization parameter	17.8	24.2	°C/W
ψ_JB	Junction-to-board characterization parameter	118.8	105.9	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At T_A = 25°C, V_S = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and R_L = 10 kΩ (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
RESPONSIVITY
	Photodiode current			0.45		A/W
	Voltage output			0.45		V/µW
	Voltage output vs temperature			100		ppm/°C
	Unit-to-unit variation			±5%
	Nonlinearity⁽¹⁾	Full-scale (FS) output = 24 V		±0.01		% of FS
	Photodiode area	0.090 in × 0.090 in		0.008		in²
	Photodiode area	2.29 mm × 2.29 mm		5.2		mm²
DARK ERRORS, RTO⁽²⁾
	Offset voltage, output		5	7.5	10	mV
	Offset voltage vs temperature			±10		µV/°C
	Offset voltage vs power supply	V_S = 2.7 V to 36 V		10	100	µV/V
	Voltage noise, dark	f_B = 0.1 Hz to 20 kHz, V_S = 15 V, V_PIN3 = –15 V		300		µVrms
TRANSIMPEDANCE GAIN
	Resistor			1		MΩ
	Tolerance			±0.5%	±2%
	Tolerance vs temperature			±50		ppm/°C
FREQUENCY RESPONSE
	Bandwidth	V_OUT = 10 V_PP		14		kHz
	Rise and fall time	10% to 90%, V_OUT = 10-V step		28		µs
	Settling time	to 0.05%, V_OUT = 10-V step		160		µs
		to 0.1%, V_OUT = 10-V step		80		µs
		to 1%, V_OUT = 10-V step		70		µs
	Overload recovery	100%, return to linear operation		50		µs
OUTPUT
	Voltage output, high		(V_S) – 1.3	(V_S) – 1.15		V
	Capacitive load, stable operation			10		nF
	Short-circuit current	V_S = 36 V		15		mA
POWER SUPPLY
	Quiescent current	Dark, V_PIN3 = 0 V		120		µA
	Quiescent current	R_L = ∞, V_OUT = 10 V		220		µA

(1) Deviation in percent of full scale from best-fit straight line.

(2) Referred to output. Includes all error sources.

6.6 Electrical Characteristics: Photodiode

At T_A = 25°C and V_S = 2.7 V to 36 V (unless otherwise noted)

	TEST CONDITIONS	MIN	TYP	UNIT
Photodiode area	0.090 in × 0.090 in		0.008	in²
Photodiode area	2.29 mm × 2.29 mm		5.2	mm²
Current responsivity	λ = 650 nm		0.45	A/W
Current responsivity	λ = 650 nm		865	(µA/W)/cm²
Dark current	V_DIODE = 7.5 mV		2.5	pA
Dark current vs temperature	V_DIODE = 7.5 mV	Doubles every 7°C		—
Capacitance			1200	pF

6.7 Electrical Characteristics: Op Amp⁽¹⁾

At T_A = 25°C, V_S = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and R_L = 10 kΩ (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	UNIT
INPUT
	Offset voltage			±0.5	mV
	vs temperature			±2.5	µV/°C
	vs power supply			10	µV/V
	Input bias current	(–) input		165	pA
	vs temperature	(–) input	Doubles every 10°C		—
	Input impedance	Differential		400 \|\| 5	MΩ \|\| pF
	Input impedance	Common-mode		250 \|\| 35	GΩ \|\| pF
	Common-mode input voltage range	Linear operation	0 to (V_S – 1)		V
	Common-mode rejection			90	dB
OPEN-LOOP GAIN
	Open-loop voltage gain			90	dB
FREQUENCY RESPONSE
	Gain bandwidth product⁽²⁾			2	MHz
	Slew rate			1	V/µs
	Settling time	0.05%		8.0	µs
		0.1%		7.7	µs
		1%		5.8	µs
OUTPUT
	Voltage output, high		(V_S) – 1.3	(V_S) – 1.15	V
	Short-circuit current	V_S = 36 V		15	mA
POWER SUPPLY
	Quiescent current	Dark, V_PIN3 = 0 V		120	µA
	Quiescent current	R_L = ∞, V_OUT = 10 V		220	µA