SBASAH5A April   2022  – September 2022 PCM1822-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4.     Thermal Information
    5. 7.4 Electrical Characteristics
    6. 7.5 Timing Requirements: TDM, I2S or LJ Interface
    7. 7.6 Switching Characteristics: TDM, I2S or LJ Interface
    8. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Hardware Control
      2. 8.3.2 Audio Serial Interfaces
        1. 8.3.2.1 Time Division Multiplexed Audio (TDM) Interface
        2. 8.3.2.2 Inter IC Sound (I2S) Interface
      3. 8.3.3 Phase-Locked Loop (PLL) and Clock Generation
      4. 8.3.4 Input Channel Configurations
      5. 8.3.5 Reference Voltage
      6. 8.3.6 Signal-Chain Processing
        1. 8.3.6.1 Digital High-Pass Filter
        2. 8.3.6.2 Configurable Digital Decimation Filters
          1. 8.3.6.2.1 Linear Phase Filters
            1. 8.3.6.2.1.1 Sampling Rate: 8 kHz or 7.35 kHz
            2. 8.3.6.2.1.2 Sampling Rate: 16 kHz or 14.7 kHz
            3. 8.3.6.2.1.3 Sampling Rate: 24 kHz or 22.05 kHz
            4. 8.3.6.2.1.4 Sampling Rate: 32 kHz or 29.4 kHz
            5. 8.3.6.2.1.5 Sampling Rate: 48 kHz or 44.1 kHz
            6. 8.3.6.2.1.6 Sampling Rate: 96 kHz or 88.2 kHz
            7. 8.3.6.2.1.7 Sampling Rate: 192 kHz or 176.4 kHz
          2. 8.3.6.2.2 Low-Latency Filters
            1. 8.3.6.2.2.1 Sampling Rate: 16 kHz or 14.7 kHz
            2. 8.3.6.2.2.2 Sampling Rate: 24 kHz or 22.05 kHz
            3. 8.3.6.2.2.3 Sampling Rate: 32 kHz or 29.4 kHz
            4. 8.3.6.2.2.4 Sampling Rate: 48 kHz or 44.1 kHz
            5. 8.3.6.2.2.5 Sampling Rate: 96 kHz or 88.2 kHz
      7. 8.3.7 Dynamic Range Enhancer (DRE)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Active Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.