SBOS283E September   2003  – December 2024 REF1112

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Shunt Regulator
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
      2. 7.2.2 MicroPOWER 3μA, 1V Voltage Reference
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
      3. 7.2.3 2.5V Reference on 1μA
        1. 7.2.3.1 Design Requirements
        2. 7.2.3.2 Detailed Design Procedure
      4. 7.2.4 Adjustable Voltage Shunt Reference
      5. 7.2.5 Level Shift to Achieve Full ADC Input Range
      6. 7.2.6 Stable Current Source
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

VR = 1.25V, TA = +25°C, IREF = 1.2μA and CLOAD = 10nF, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRReverse breakdown voltageIREF = 1.2µA1.24751.251.2525V
–0.2%0.2%
ΔVRTemperature coefficient1.2μA ≤ IREF ≤ 5mA, TA = 0°C to +70°C1030ppm/°C
1.5μA ≤ IREF ≤ 5mA, TA = –40°C to +85°C1550
1.5μA ≤ IREF ≤ 5mA, TA = –40°C to +125°C15
IRMINMinimum operating current11.2µA
ΔVR/ΔIRReverse breakdown voltage change with current1.2μA ≤ IREF ≤ 5mA100150ppm/mA
ZRReverse dynamic impedance1.2μA ≤ IREF ≤ 5mA0.1350.2Ω
eNLow-frequency noise(1)0.1Hz ≤ IREF ≤ 10Hz25μVPP
VHYSTThermal hysteresis(2)100ppm
ΔVRLong-term stability+25°C ± 0.1°C60ppm/kHr
(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz.
(2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range, and returning to +25°C.