SCAS286U January   1993  – July 2024 SN54LVC32A , SN74LVC32A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions, SN54LVC32A
    4. 5.4  Recommended Operating Conditions, SN74LVC32A
    5. 5.5  Thermal Information
    6. 5.6  Electrical Characteristics, SN54LVC32A
    7. 5.7  Electrical Characteristics, SN74LVC32A
    8. 5.8  Switching Characteristics, SN54LVC32A
    9. 5.9  Switching Characteristics, SN74LVC32A
    10. 5.10 Operating Characteristics
    11. 5.11 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9.   Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3.     Power Supply Recommendations
    4. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Links
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
      1. 8.3.1 Community Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. Revision History
  12. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • J|14
  • FK|20
  • W|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrostatic Discharge Caution

SN54LVC32A SN74LVC32A This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.