SCLS961 November   2023 SN54SC4T32-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Noise Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS Push-Pull Outputs
      2. 7.3.2 Clamp Diode Structure
      3. 7.3.3 SCxT Enhanced Input Voltage
        1. 7.3.3.1 Down Translation
        2. 7.3.3.2 Up Translation
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Vendor item drawing available, VID V62/23629-01XE
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2 V to 5.5 V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2 V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8-V – Inputs from 1.2 V
        • 2.5-V – Inputs from 1.8 V
        • 3.3-V – Inputs from 1.8 V, 2.5 V
        • 5.0-V – Inputs from 2.5 V, 3.3 V
      • Down translation:

        • 1.2-V – Inputs from 1.8 V, 2.5 V, 3.3 V, 5.0 V

        • 1.8-V – Inputs from 2.5 V, 3.3 V, 5.0 V
        • 2.5-V – Inputs from 3.3 V, 5.0 V
        • 3.3-V – Inputs from 5.0 V
  • 5.5 V tolerant input pins
  • Output drive up to 25 mA AT 5-V
  • Latch-up performance exceeds 250 mA per
    JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification