SCAS991 April   2024 SN54SC8T541-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 SCxT Enhanced Input Voltage
        1. 7.3.1.1 Down Translation
        2. 7.3.1.2 Up Translation
      2. 7.3.2 Balanced CMOS 3-State Outputs
      3. 7.3.3 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information
    2. 11.2 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • VID TBD
  • Radiation Tolerant:
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2/mg at 125°C
    • Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si)
    • Single Event Transient (SET) characterized up to LET = 43MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA
    per JESD 17
  • Space enhanced plastic:
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability