SLLS533F May   2002  – March 2023 SN65HVD05 , SN65HVD06 , SN65HVD07 , SN75HVD05 , SN75HVD06 , SN75HVD07

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Package Dissipation Ratings
    5. 5.5 Driver Electrical Characteristics
    6. 5.6 Driver Switching Characteristics
    7. 5.7 Receiver Electrical Characteristics
    8. 5.8 Receiver Switching Characteristics
    9. 5.9 Typical Characteristics
      1.      Parameter Measurement Information
  6. 6 Function Tables
    1. 6.1 Receiver Failsafe
  7. 7 Equivalent Input and Output Schematic Diagrams
  8. 8 Application and Implementation
    1.     Typical Application
  9. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.