SLLS771F November   2006  – March 2023 SN65HVD3080E , SN65HVD3083E , SN65HVD3086E

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Power Dissipation Ratings
    3. 5.3  Electrostatic Discharge Protection
    4. 5.4  Supply Current
    5. 5.5  Recommended Operating Conditions
    6. 5.6  Thermal Information
    7. 5.7  Driver Electrical Characteristics
    8. 5.8  Driver Switching Characteristics
    9. 5.9  Receiver Electrical Characteristics
    10. 5.10 Receiver Switching Characteristics
    11. 5.11 Typical Characteristics
  6. 6 Parameter Measurement Information
  7. 7 Device Information
    1. 7.1 Function Tables
    2. 7.2 Equivalent Input and Output Schematic Diagrams
  8. 8 Application Information
    1. 8.1 Hot-Plugging
  9. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.