SLLS665M September   2005  – February 2023 SN65HVD30 , SN65HVD31 , SN65HVD32 , SN65HVD33 , SN65HVD34 , SN65HVD35

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
    1.     6
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: Driver
    6. 7.6  Electrical Characteristics: Receiver
    7. 7.7  Device Power Dissipation – PD
    8. 7.8  Supply Current Characteristics
    9. 7.9  Switching Characteristics: Driver
    10. 7.10 Switching Characteristics: Receiver
    11. 7.11 Dissipation Ratings
    12. 7.12 Typical Characteristics
      1.      Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Low-Power Standby Mode
      2. 8.3.2 Driver Output Current Limiting
      3. 8.3.3 Hot-Plugging
      4. 8.3.4 Receiver Failsafe
      5. 8.3.5 Safe Operation With Bus Contention
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.6 Electrical Characteristics: Receiver

over recommended operating conditions unless otherwise noted
PARAMETERTEST CONDITIONSMINTYP(1)MAXUNIT
VIT+Positive-going differential input threshold voltageIO = –8 mA–0.02V
VIT-Negative-going differential input threshold voltageIO = 8 mA–0.20V
VhysHysteresis voltage (VIT+ – VIT–)50mV
VIKEnable-input clamp voltageII = –18 mA–1.5V
VOOutput voltageVID = 200 mV, IO = –8 mA, See Figure 8-92.4V
VID = –200 mV, IO = 8 mA, See Figure 8-90.4
IO(Z)High-impedance-state output currentVO = 0 or VCC, RE at VCC–11μA
IA or IBBus input currentSN65HVD31, SN65HVD32,
SN65HVD34, SN65HVD35		VA or VB = 12 V
Other input at 0 V		0.050.1mA
VA or VB = 12 V, VCC = 0 V
Other input at 0 V		0.060.1
VA or VB = –7 V
Other input at 0 V		–0.10–0.04
VA or VB = –7 V, VCC = 0 V
Other input at 0 V		–0.10–0.03
SN65HVD30, SN65HVD33VA or VB = 12 V
Other input at 0 V		0.200.35mA
VA or VB = 12 V, VCC = 0 V
Other input at 0 V		0.240.4
VA or VB = –7 V
Other input at 0 V		–0.35–0.18
VA or VB = –7 V, VCC = 0 V
Other input at 0 V		–0.25–0.13
IIHInput current, REVIH = 0.8 V or 2 V–60μA
CIDDifferential input capacitanceVID = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V15pF
(1) All typical values are at 25°C and with a 3.3-V supply.