SLLS666F September   2005  – March 2023 SN65HVD50 , SN65HVD51 , SN65HVD52 , SN65HVD53 , SN65HVD54 , SN65HVD55

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Available Options
  6. 6 Pin Configurations
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Electrostatic Discharge Protection
    4. 7.4 Driver Electrical Characteristics
    5. 7.5 Driver Switching Characteristics
    6. 7.6 Receiver Electrical Characteristics
    7. 7.7 Receiver Switching Characteristics
    8. 7.8 Thermal Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Device Information
    1. 9.1 Ll-Power Standby Mode
    2. 9.2 Function Tables
    3. 9.3 Equivalent Input and Output Schematic Diagrams
  10. 10Application and Implementation
    1. 10.1 Thermal Characteristics of IC Packages
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.