SLLS396G SEPTEMBER   1999  – December 2015 SN65LVDS104 , SN65LVDS105

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Selection Guide to LVDS Repeaters
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings—JEDEC
    3. 7.3  ESD Ratings—MIL-STD
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Thermal Information
    6. 7.6  SN65LVDS104 Electrical Characteristics
    7. 7.7  SN65LVDS105 Electrical Characteristics
    8. 7.8  SN65LVDS104 Switching Characteristics
    9. 7.9  SN65LVDS105 Switching Characteristics
    10. 7.10 Dissipation Ratings
    11. 7.11 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fail Safe
    4. 9.4 Device Functional Modes
      1. 9.4.1 Input Level Translation
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Point-to-Point Communications
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1  Bypass Capacitance
        2. 10.2.3.2  Driver Supply Voltage
        3. 10.2.3.3  Driver Input Voltage
        4. 10.2.3.4  Driver Output Voltage
        5. 10.2.3.5  Interconnecting Media
        6. 10.2.3.6  PCB Transmission Lines
        7. 10.2.3.7  Termination Resistor
        8. 10.2.3.8  Receiver Supply Voltage
        9. 10.2.3.9  Receiver Input Common-Mode Range
        10. 10.2.3.10 Receiver Input Signal
        11. 10.2.3.11 Receiver Output Signal
      4. 10.2.4 Application Curve
    3. 10.3 Multidrop Communications
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Interconnecting Media
  11. 11Power Supply Recommendations
    1. 11.1 Coupling Capacitor Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Microstrip vs. Stripline Topologies
      2. 12.1.2 Dielectric Type and Board Construction
      3. 12.1.3 Recommended Stack Layout
      4. 12.1.4 Separation Between Traces
      5. 12.1.5 Crosstalk and Ground Bounce Minimization
      6. 12.1.6 Decoupling
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • D|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

13 Device and Documentation Support

13.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 5. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
SN65LVDS104 Click here Click here Click here Click here Click here
SN65LVDS105 Click here Click here Click here Click here Click here

13.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

13.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

13.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.