SCLS259N December   1995  – January 2025 SN74AHC139

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Description
  4. 3 Pin Configuration and Functions
  5. 4 Specifications
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 ESD Ratings
    3. 4.3 Recommended Operating Conditions
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Switching Characteristcs, VCC = 3.3 V ± 0.3 V
    7. 4.7 Switching Characteristics, VCC = 5 V ± 0.5 V
    8. 4.8 Operating Characteristics
  6. 5 Parameter Measurement Information
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Balanced CMOS 3-State Outputs
      2. 6.3.2 Standard CMOS Inputs
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Power Considerations
        2. 7.2.1.2 Input Considerations
        3. 7.2.1.3 Output Considerations
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DB|16
  • PW|16
  • NS|16
  • N|16
  • RGY|16
  • D|16
  • DGV|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Operating range 2V to 5.5V
  • Designed specifically for high-speed memory decoders and data-transmission systems
  • Incorporate two enable inputs to simplify cascading or data reception
  • Latch-up performance exceeds 250mA per JESD 17
  • ESD protection exceeds JESD 22:
    • 2000V human-body model (A114-A)
    • 1000V charged-device model (C101)