SCES382M March   2002  – August 2022 SN74AUC1G125

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: CL = 15 pF
    7. 6.7 Switching Characteristics: CL = 30 pF
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ULTTL CMOS Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Partial Power Down (Ioff)
      4. 8.3.4 Clamp Diode Structure
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Optimized for 1.8-V operation
  • ±8-mA output drive at 1.8 V
  • Maximum tpd of 2.5 ns at 1.8 V, 30 pF load
  • Wide operating voltage range of 0.8 V to 2.7 V
  • Over-voltage tolerant I/Os support up to 3.6 V, independent of VCC
  • Available in the Texas Instruments NanoFree™ package
  • Ioff feature supports partial power down mode and back drive protection
  • Low power consumption, 10-µA maximum ICC
  • Latch-up performance exceeds 100 mA per JESD 78, Class II