SCES375P september   2001  – June 2017 SN74AUC1G14

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: CL = 15 pF
    7. 6.7 Switching Characteristics: CL = 30 pF
    8. 6.8 Operating Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
    2. 8.2 Device Functional Modes
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Community Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
  • DCK|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage –0.5 3.6 V
VI Input voltage(2) –0.5 3.6 V
VO Voltage range applied to any output in the high-impedance or power-off state(2) –0.5 3.6 V
VO Output voltage range(2) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±20 mA
Continuous current through VCC or GND ±100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 1000
Machine Model (A115-A) 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

See(1)
MIN MAX UNIT
VCC Supply voltage 0.8 2.7 V
VI Input voltage 0 3.6 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 0.8 V –0.7 mA
VCC = 1.1 V –3
VCC = 1.4 V –5
VCC = 1.65 V –8
VCC = 2.3 V –9
IOL Low-level output current VCC = 0.8 V 0.7 mA
VCC = 1.1 V 3
VCC = 1.4 V 5
VCC = 1.65 V 8
VCC = 2.3 V 9
TA Operating free-air temperature –40 85 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74AUC1G14 UNIT
DBV (SOT-23) DCK (SC70) YZP (DSBGA)
5 PINS 5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 206 252 132 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VT+
Positive-going input threshold voltage		 0.8 V 0.5 V
1.1 V 0.51 0.86
1.4 V 0.65 1
1.65 V 0.79 1.16
2.3 V 1.11 1.56
VT–
Negative-going input threshold voltage		 0.8 V 0.3 V
1.1 V 0.22 0.53
1.4 V 0.3 0.58
1.65 V 0.39 0.62
2.3 V 0.58 0.87
ΔVT
Hysteresis
(VT+ – VT–)		 0.8 V 0.21 V
1.1 V 0.25 0.38
1.4 V 0.31 0.5
1.65 V 0.37 0.62
2.3 V 0.48 0.77
VOH IOH = –100 μA 0.8 V to 2.7 V VCC – 0.1 V
IOH = –0.7 mA 0.8 V 0.55
IOH = –3 mA 1.1 V 0.8
IOH = –5 mA 1.4 V 1
IOH = –8 mA 1.65 V 1.2
IOH = –9 mA 2.3 V 1.8
VOL IOL = 100 μA 0.8 V to 2.7 V 0.2 V
IOL = 0.7 mA 0.8 V 0.25
IOL = 3 mA 1.1 V 0.3
IOL = 5 mA 1.4 V 0.4
IOL = 8 mA 1.65 V 0.45
IOL = 9 mA 2.3 V 0.6
II A input VI = VCC or GND 0 to 2.7 V ±5 µA
Ioff VI or VO = 2.7 V 0 ±10 µA
ICC VI = VCC or GND, IO = 0 0.8 V to 2.7 V 10 µA
Ci VI = VCC or GND 2.5 V 3.5 pF
(1) All typical values are at TA = 25°C.

6.6 Switching Characteristics: CL = 15 pF

over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 1)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC = 0.8 V VCC = 1.2 V
± 0.1 V		 VCC = 1.5 V
± 0.1 V		 VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 UNIT
TYP MIN MAX MIN MAX MIN TYP MAX MIN MAX
tpd A Y 5.8 0.7 4 0.6 2.3 0.5 1.2 1.9 0.5 1.6 ns

6.7 Switching Characteristics: CL = 30 pF

over recommended operating free-air temperature range, CL = 30 pF (unless otherwise noted) (see Figure 1)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 UNIT
MIN TYP MAX MIN MAX
tpd A Y 0.7 1.6 2.5 0.5 2.5 ns

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST
CONDITIONS		 VCC = 0.8 V VCC = 1.2 V VCC = 1.5 V VCC = 1.8 V VCC = 2.5 V UNIT
TYP TYP TYP TYP TYP
Cpd Power dissipation
capacitance		 f = 10 MHz 14 15 15 16 19 pF