SCES785E December   2008  – November 2023 SN74AVC8T245-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics: VCCA = 1.2 V
    7. 5.7  Switching Characteristics: VCCA = 1.5 V ± 0.1 V
    8. 5.8  Switching Characteristics: VCCA = 1.8 V ± 0.15 V
    9. 5.9  Switching Characteristics: VCCA = 2.5 V ± 0.2 V
    10. 5.10 Switching Characteristics: VCCA = 3.3 V ± 0.3 V
    11. 5.11 Operating Characteristics
    12. 5.12 Typical Total Static Current Consumption (ICCA + ICCB)
    13. 5.13 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fully Configurable Dual-Rail Design
      2. 7.3.2 Supports High Speed Translation
      3. 7.3.3 Ioff Supports Partial-Power-Down Mode Operation
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHL|24
  • PW|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per AEC Q100-002 Classification Level H2(1)±2000V
Charged-device model (CDM), per AEC Q100-011 Classification Level C3B±750
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.