SCDS135E September   2003  – December 2024 SN74CB3Q3257

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics, VCC = 2.5V
    7. 5.7 Switching Characteristics, VCC = 3.3V
    8. 5.8 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
  9.   Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3.     Power Supply Recommendations
    4. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  10. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  11. 8Revision History
  12. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • DBQ|16
  • RGY|16
  • DGV|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • High-bandwidth data path (up to 500MHz)
  • 5V Tolerant I/Os with device powered up or powered down
  • Low and flat on-state resistance (ron) characteristics over operating range (ron= 4Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0- to 5V Switching with 3.3V VCC
    • 0- to 3.3V Switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5pF typical)
  • Fast switching frequency (f OE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.7mA typical)
  • VCC Operating range from 2.3V to 3.6V
  • Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
  • Control inputs can be driven by TTL or 5V and 3.3V CMOS outputs
  • Ioff Supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA Per JESD 78, class II
  • ESD Performance tested per JESD 22
    • 2000V Human body model (A114-B, class II)
    • 1000V Charged-device model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating (1)
1. For additional information regarding the performance characteristics of the CB3Q family, refer to the TI CBT-C, CB3T, and CB3Q Signal-Switch Families application report.