Refer to the PDF data sheet for device specific package drawings
The SN74CBTLV3257 device is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.
The select (S) input controls the data flow. The FET multiplexers/demultiplexers are disabled when the output-enable (OE) input is high.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
SN74CBTLV3257DBQ | SSOP (16) | 4.90 mm × 3.90 mm |
SN74CBTLV3257PW | TSSOP (16) | 5.00 mm × 4.40 mm |
SN74CBTLV3257DGV | TVSOP (16) | 3.60 mm × 4.40 mm |
SN74CBTLV3257D | SOIC (16) | 9.90 mm × 3.91 mm |
SN74CBTLV3257RGY | VQFN (16) | 4.00 mm × 3.50 mm |
SN74CBTLV3257RSV | UQFN (16) | 2.60 mm × 1.80 mm |
Changes from L Revision (October 2016) to M Revision
Changes from K Revision (April 2015) to L Revision
Changes from J Revision (December 2012) to K Revision
Changes from I Revision (October 2003) to J Revision
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | SOIC, SSOP, TVSOP, TSSOP, VQFN | UQFN | ||
1A | 4 | 2 | I/O | Channel 1 out/in common |
1B1 | 2 | 16 | I/O | Channel 1 in/out 1 |
1B2 | 3 | 1 | I/O | Channel 1 in/out 2 |
2A | 7 | 5 | I/O | Channel 2 out/in common |
2B1 | 5 | 3 | I/O | Channel 2 in/out 1 |
2B2 | 6 | 4 | I/O | Channel 2 in/out 2 |
3A | 9 | 7 | I/O | Channel 3 out/in common |
3B1 | 11 | 9 | I/O | Channel 3 in/out 1 |
3B2 | 10 | 8 | I/O | Channel 3 in/out 2 |
4A | 12 | 10 | I/O | Channel 4 out/in common |
4B1 | 14 | 12 | I/O | Channel 4 in/out 1 |
4B2 | 13 | 11 | I/O | Channel 4 in/out 2 |
GND | 8 | 6 | — | Ground |
OE | 15 | 13 | I | Output Enable, active low |
S | 1 | 15 | I | Select |
VCC | 16 | 14 | — | Power |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | –0.5 | 4.6 | V | |
VI | Input voltage(2) | –0.5 | 4.6 | V | |
Continuous channel current | 128 | mA | |||
IIK | Input clamp current | VI/O < 0 | –50 | mA | |
TJ | Junction temperature | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | 2000 | V |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | 2.3 | 3.6 | V | |
VIH | High-level control input voltage | VCC = 2.3 V to 2.7 V | 1.7 | V | |
VCC = 2.7 V to 3.6 V | 2 | ||||
VIL | Low-level control input voltage | VCC = 2.3 V to 2.7 V | 0.7 | V | |
VCC = 2.7 V to 3.6 V | 0.8 | ||||
TA | Operating free-air temperature | –40 | 85 | °C |