SCES894E April   2019  – December 2021 SN74HCS74-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS Push-Pull Outputs
      2. 8.3.2 CMOS Schmitt-Trigger Inputs
      3. 8.3.3 Clamp Diode Structure
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Power Considerations
        2. 9.2.1.2 Input Considerations
        3. 9.2.1.3 Output Considerations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VT+ Positive switching threshold 2 V 0.7 1.5 V
4.5 V 1.7 3.15
6 V 2.1 4.2
VT- Negative switching threshold 2 V 0.3 1.0 V
4.5 V 0.9 2.2
6 V 1.2 3.0
ΔVT Hysteresis (VT+ - VT-)(1) 2 V 0.2 1.0 V
4.5 V 0.4 1.4
6 V 0.6 1.6
VOH High-level output voltage VI = VIH or VIL IOH = -20 µA 2 V to 6 V VCC – 0.1 VCC – 0.002 V
IOH = -6 mA 4.5 V 4.0 4.3
IOH = -7.8 mA 6 V 5.4 5.75
VOL Low-level output voltage VI = VIH or VIL IOL = 20 µA 2 V to 6 V 0.002 0.1 V
IOL = 6 mA 4.5 V 0.18 0.30
IOL = 7.8 mA 6 V 0.22 0.33
II Input leakage current VI = VCC or 0 6 V ±100 ±1000 nA
ICC Supply current VI = VCC or 0, IO = 0 6 V 0.1 2 µA
Ci Input capacitance 2 V to 6 V 5 pF
Cpd Power dissipation capacitance per gate No load 2 V to 6 V 10 pF
(1) Guaranteed by design.