SCLS925B May   2023  – April 2024 SN74LV1T04-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics - 1.8V VCC
    7. 5.7  Switching Characteristics - 2.5V VCC
    8. 5.8  Switching Characteristics - 3.3V VCC
    9. 5.9  Switching Characteristics - 5.0V VCC
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS 3-State Outputs
      2. 7.3.2 Clamp Diode Structure
      3. 7.3.3 LVxT Enhanced Input Voltage
        1. 7.3.3.1 Down Translation
        2. 7.3.3.2 Up Translation
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
  • DCK|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002 (1) HBM ESD Classification Level 2 ±2000 V
Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B ±1000
(1) AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.