SCLS739E September   2013  – March 2024 SN74LV1T08

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Related Products
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Operating Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS Push-Pull Outputs
      2. 8.3.2 LVxT Enhanced Input Voltage
        1. 8.3.2.1 Up Translation
        2. 8.3.2.2 Down Translation
      3. 8.3.3 Clamp Diode Structure
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Power Supply Recommendations
    2. 9.2 Layout
      1. 9.2.1 Layout Guidelines
      2. 9.2.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support (Analog)
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage range –0.5 7.0 V
VI Input voltage range(2) –0.5 7.0 V
VO Voltage range applied to any output in the high-impedance or power-off state(2) –0.5 4.6 V
Voltage range applied to any output in the high or low state(2) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –20 mA
IOK Output clamp current VO < 0 or VO > VCC ±20 mA
IO Continuous output current ±25 mA
Continuous current through VCC or GND ±50 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.