SCLS912B december   2022  – april 2023 SN74LV4T08-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics 1.8-V VCC
    7. 6.7  Switching Characteristics 2.5-V VCC
    8. 6.8  Switching Characteristics 3.3-V VCC
    9. 6.9  Switching Characteristics 5.0-V VCC
    10. 6.10 Noise Characteristics
  7. 7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Balanced CMOS 3-State Outputs
      2. 9.3.2 Clamp Diode Structure
      3. 9.3.3 LVxT Enhanced Input Voltage
        1. 9.3.3.1 Down Translation
        2. 9.3.3.2 Up Translation
      4. 9.3.4 Wettable Flanks
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Power Considerations
        2. 10.2.1.2 Input Considerations
        3. 10.2.1.3 Output Considerations
      2. 10.2.2 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|14
  • BQA|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

13.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.