SCLS908A December   2022  – April 2023 SN74LV8T245-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics - 1.8-V VCC
    7. 6.7  Switching Characteristics - 2.5-V VCC
    8. 6.8  Switching Characteristics - 3.3-V VCC
    9. 6.9  Switching Characteristics - 5-V VCC
    10. 6.10 Noise Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS 3-State Outputs
      2. 8.3.2 Clamp Diode Structure
      3. 8.3.3 LVxT Enhanced Input Voltage
        1. 8.3.3.1 Down Translation
        2. 8.3.3.2 Up Translation
      4. 8.3.4 Wettable Flanks
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
      1. 9.3.1 Power Considerations
      2. 9.3.2 Input Considerations
      3. 9.3.3 Output Considerations
      4. 9.3.4 Detailed Design Procedure
    4. 9.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002 HBM ESD Classification Level 2(1) ±4000 V
Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B ±2000
(1) AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.