SCAS995 March   2024 SN74LV8T595-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Noise Characteristics
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS Push-Pull Outputs
      2. 7.3.2 Balanced CMOS 3-State Outputs
      3. 7.3.3 Latching Logic with Known Power-Up State
      4. 7.3.4 LVxT Enhanced Input Voltage
      5. 7.3.5 Wettable Flanks
      6. 7.3.6 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • BQB|16
  • PW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002 HBM ESD Classification Level 2(1) ±2000 V
Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B ±1000
(1) AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.