SCES416N December   2002  – January 2017 SN74LVC1G97

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 V –50 mA
IOK Output clamp current VO < 0 V –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101\(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

See (1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
TA Operating free-air temperature BGA package –40 85 °C
All other packages –40 125
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1G97 UNIT
DBV (SOT-23) DCK (SC70) DRL (SOT) YZP (DSBGA)
6 PINS 6 PINS 6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 165 259 142 123 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC –40°C TO +85°C –40°C TO +125°C UNIT
MIN TYP(1) MAX MIN TYP(1) MAX
VT+
Positive-going input
threshold voltage		 1.65 V 0.79 1.16 0.79 1.16 V
2.3 V 1.11 1.56 1.11 1.56
3 V 1.5 1.87 1.5 1.87
4.5 V 2.16 2.74 2.16 2.74
5.5 V 2.61 3.33 2.61 3.33
VT–
Negative-going input
threshold voltage		 1.65 V 0.35 0.62 0.35 0.62 V
2.3 V 0.58 0.87 0.58 0.87
3 V 0.84 1.19 0.84 1.19
4.5 V 1.41 1.9 1.41 1.9
5.5 V 1.87 2.29 1.87 2.29
ΔVT
Hysteresis (VT+ – VT–)		 1.65 V 0.3 0.62 0.3 0.62 V
2.3 V 0.4 0.8 0.4 0.8
3 V 0.53 0.87 0.53 0.87
4.5 V 0.71 1.04 0.71 1.04
5.5 V 0.71 1.11 0.71 1.11
VOH IOH = –100 µA 1.65 V to 5.5 V VCC – 0.1 VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2 1.2
IOH = –8 mA 2.3 V 1.9 1.9
IOH = –16 mA 3 V 2.4 2.4
IOH = –24 mA 2.3 2.3
IOH = –32 mA 4.5 V 3.8 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 0.1 V
IOL = 4 mA 1.65 V 0.45 0.45
IOL = 8 mA 2.3 V 0.3 0.3
IOL = 16 mA 3 V 0.4 0.45
IOL = 24 mA 0.55 0.55
IOL = 32 mA 4.5 V 0.55 0.58
II VI = 5.5 V or GND 0 to 5.5 V ±5 ±5 µA
Ioff VI or VO = 5.5 V 0 ±10 ±10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 10 µA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 500 µA
CI VI = VCC or GND 3.3 V 3.5 3.5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 –40°C TO 85°C UNIT
VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V
MIN MAX MIN MAX MIN MAX MIN MAX
tpd Any In Y 3.2 14.4 2 8.3 1.5 6.3 1.1 5.1 ns

6.7 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 –40°C TO 125°C UNIT
VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V
MIN MAX MIN MAX MIN MAX MIN MAX
tpd Any In Y 3.2 16.4 2 9.3 1.5 7.3 1.1 6.1 ns

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST
CONDITIONS		 VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V UNIT
TYP TYP TYP TYP
Cpd Power dissipation capacitance f = 10 MHz 22 23 23 26 pF

6.9 Typical Characteristics

SN74LVC1G97 cpd_vs_vcc_sces416.gif Figure 1. Power Dissipation Capacitance vs Power Supply Voltage