SCES557E March   2004  – October 2020 SN74LVC2G08-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Operating Characteristics
  7. 7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Balanced CMOS Push-Pull Outputs
      2. 9.3.2 Standard CMOS Inputs
      3. 9.3.3 Clamp Diode Structure
      4. 9.3.4 Partial Power Down (Ioff)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Detailed Design Procedure
  11. 11Application Curves
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14Device and Documentation Support
    1. 14.1 Receiving Notification of Documentation Updates
    2. 14.2 Support Resources
    3. 14.3 Trademarks
    4. 14.4 Glossary
    5. 14.5 Electrostatic Discharge Caution
  15. 15Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
  • DCT|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman body model (HBM), per AEC Q100-002(1)±2000V
Charged device model (CDM), per AEC Q100-011±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.