SCES359J August   2001  – October 2015 SN74LVC2G34

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Operating Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Documentation Support
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|6
  • DRL|6
  • YZP|6
  • DCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)

MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TA Operating free-air temperature DBV, DCK, DRL Package –40 125 °C
YZP Package -40 85
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Semiconductor and Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC2G34 UNIT
DBV (SOT-23) DCK (SC70) DRL (SOT) YZP (DSBGA)
6 PINS 6 PINS 6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 165 259 142 123 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VOH IOH = –100 µA 1.65 V to 5.5 V VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2
IOH = –8 mA 2.3 V 1.9
IOH = –16 mA 3 V 2.4
IOH = –24 mA 2.3
IOH = –32 mA 4.5 V 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 V
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3
IOL = 16 mA 3 V 0.4
IOL = 24 mA 0.55
IOL = 32 mA 4.5 V 0.55
II A inputs VI = 5.5 V or GND 0 to 5.5 V ±5 µA
Ioff VI or VO = 5.5 V 0 ±10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 µA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 µA
Ci VI = VCC or GND 3.3 V 3.5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 OPERATING FREE-AIR TEMPERATURE (TA) VCC MIN MAX UNIT
tpd A Y –40°C to 85°C VCC = 1.8 V ± 0.15 V 3.2 8.6 ns
VCC = 2.5 V ± 0.2 V 1.5 4.4
VCC = 3.3 V ± 0.3 V 1.4 4.1
VCC = 5 V ± 0.5 V 1 3.2
tpd A Y –40°C to 125°C VCC = 1.8 V ± 0.15 V 3.2 9.6 ns
VCC = 2.5 V ± 0.2 V 1.5 4.9
VCC = 3.3 V ± 0.3 V 1.2 4.6
VCC = 5 V ± 0.5 V 1 3.7

6.7 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS VCC TYP UNIT
Cpd Power dissipation capacitance f = 10 MHz VCC = 1.8 V 14 pF
VCC = 2.5 V 14
VCC = 3.3 V 15
VCC = 5 V 17

6.8 Typical Characteristics

SN74LVC2G34 D001_SCES519.gif Figure 1. TPD Across Temperature at 3.3-V VCC