SCES829B June   2011  – October 2021 SN74LVC2G66-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Ordering Information
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Analog Switch Characteristics
    8. 7.8 Operating Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSVCCMINTYP(1)MAXUNIT
ronOn-state switch resistanceVI = VCC or GND,
VC = VIH
(see Figure 8-1 and Figure 7-1)		IS = 4 mA1.65 V12.535Ω
IS = 8 mA2.3 V930
IS = 24 mA3 V7.520
IS = 32 mA4.5 V615
ron(p)Peak on-state resistanceVI = VCC to GND,
VC = VIH
(see Figure 8-1 and Figure 7-1)		IS = 4 mA1.65 V85120(1)Ω
IS = 8 mA2.3 V2230(1)
IS = 24 mA3 V1225
IS = 32 mA4.5 V7.520
ΔronDifference of on-state resistance
between switches		VI = VCC to GND,
VC = VIH
(see Figure 8-1 and Figure 7-1)		IS = 4 mA1.65 V10Ω
IS = 8 mA2.3 V8
IS = 24 mA3 V6
IS = 32 mA4.5 V5
IS(off)Off-state switch leakage currentVI = VCC and VO = GND or
VI = GND and VO = VCC,
VC = VIL (see Figure 8-2)		5.5 V±2μA
±0.1(1)
IS(on)On-state switch leakage currentVI = VCC or GND, VC = VIH, VO = Open
(see Figure 8-3)		5.5 V±2μA
±0.1(1)
IIControl input currentVC = VCC or GND5.5 V±1μA
±0.1(1)
ICCSupply currentVC = VCC or GND5.5 V15μA
1(1)
ΔICCSupply-current changeVC = VCC – 0.6 V5.5 V500μA
CicControl input capacitance5 V3.5pF
Cio(off)Switch input/output capacitance5 V6pF
Cio(on)Switch input/output capacitance5 V14pF
(1) TA = 25°C