SCES818C September   2010  – July 2024 SN74LVC2T45-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics: VCCA = 1.8V ± 0.15V
    7. 5.7  Switching Characteristics: VCCA = 2.5V ± 0.2V
    8. 5.8  Switching Characteristics: VCCA = 3.3V ± 0.3V
    9. 5.9  Switching Characteristics: VCCA = 5V ± 0.5V
    10. 5.10 Operating Characteristics
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fully Configurable Dual-Rail Design Allows Each Port to Operate Over the Full 1.65V to 5.5V Power-Supply Range
      2. 7.3.2 Support High-Speed Translation
      3. 7.3.3 Ioff Supports Partial-Power-Down Mode Operation
      4. 7.3.4 Balanced High-Drive CMOS Push-Pull Outputs
      5. 7.3.5 Glitch-Free Power Supply Sequencing
      6. 7.3.6 Vcc Isolation
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Unidirectional Logic Level-Shifting Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Bidirectional Logic Level-Shifting Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Enable Times
        3. 8.2.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Power-Up Consideration
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
Thermal pad, mechanical data (Package|Pins)

9.5 Electrostatic Discharge Caution

SN74LVC2T45-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.