SLRS021D December   1967  – January 2017 SN55451B , SN55452B , SN55453B , SN55454B , SN75451B , SN75452B , SN75453B , SN75454B

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Thermal Information
    4. 7.4 Electrical Characteristics
    5. 7.5 Switching Characteristics, VCC = 5 V, TA = 25°C
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
  • PS|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage, (see (2)) 7 V
VI Input voltage 5.5 V
Inter-emitter voltage (see Note (3)) 5.5 V
VO Off-state output voltage 30 V
IOK Continuous collector or output current, (see Note (4)) 400 mA
Peak collector or output current, II (tw ≤ 10 ms, duty cycle ≤ 50%, see Note (5)) 500 mA
Continuous total power dissipation See Dissipation Ratings
TA Operating free-air temperature SN5545xB –55 125 °C
SN7545xB 0 70
Case temperature for 60 seconds SN5545xB FK package 260 °C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds SN5545xB JG package 100 °C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds SN7545xB D or P package 260 °C
TJ Operating virtual junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to network GND, unless otherwise specified.
(3) This is the voltage between two emitters of a multiple-emitter transistor.
(4) This value applies when the base-emitter resistance (RBE) is equal to or less than 500 Ω.
(5) Both halves of these dual circuits may conduct rated current simultaneously; however, power dissipation averaged over a short time interval must fall within the continuous dissipation rating.

7.2 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage SN5545xB 4.5 5 5.5 V
SN7545xB 4.75 5 5.25
VIH High-level input voltage 2 V
VIL Low-level input voltage 0.8 V
TA Operating free-air temperature SN5545xB –50 125 °C
SN7545xB 0 70

7.3 Thermal Information

THERMAL METRIC(1) SN7545xB UNIT
D (SOIC) P (PDIP) PS (SO)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 122.2 63.7 119.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 68.4 53.6 71.5 °C/W
RθJB Junction-to-board thermal resistance 62.4 40.8 68.7 °C/W
ψJT Junction-to-top characterization parameter 23.2 31.1 31.6 °C/W
ψJB Junction-to-board characterization parameter 62.0 40.8 67.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.4 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIK Input clamp voltage VCC = MIN, II = – 12 mA –1.2 –1.5 V
VOL Low-level output voltage VCC = MIN, VIL = 0.8 V, IOL = 100 mA SN5545xB 0.25 0.5 V
SN7545xB 0.25 0.4
VCC = MIN, VIL = 0.8 V, IOL = 300 mA SN5545xB 0.5 0.8
SN7545xB 0.5 0.7
IOH High-level output current VCC = MIN, VIH = MIN, VOH = 30 V SN5545xB 300 µA
SN7545xB 100
II Input current at maximum input voltage VCC = MAX, VI = 5.5 V 1 mA
IIH High-level input current VCC = MAX, VI = 2.4 V 40 µA
IIL Low-level input current VCC = MAX, VI = 0.4 V –1 –1.6 mA
ICCH Supply current, outputs high VCC = MAX, VI = 5 V SNx5451B 7 11 mA
SNx5453B 8 11
VCC = MAX, VI = 0 V SNx5452B 11 14
SNx5454B 13 17
ICCL Supply current, outputs low VCC = MAX, VI = 0 V SNx5451B 52 65 mA
SNx5453B 54 68
VCC = MAX, VI = 5 V SNx5452B 56 71
SNx5454B 61 79

7.5 Switching Characteristics, VCC = 5 V, TA = 25°C

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT
tPLH Propagation delay time, low-to-high-level output IO ≈ 200 mA, CL = 15 pF,
RL = 50 Ω, L See Figure 2		 SNx5451B, SNx5453B 18 25 ns
SNx5452B 26 35
SNx5454B 27 35
tPHL Propagation delay time, high-to-low-level output IO ≈ 200 mA, CL = 15 pF,
RL = 50 Ω, L See Figure 2		 SNx5451B, SNx5453B 18 25
SNx5452B, SNx5454B 24 35
tTLH Transition time, low-to-high-level output IO ≈ 200 mA, CL = 15 pF,
RL = 50 Ω, L See Figure 2		 5 8
tTHL Transition time, high-to-low-level output IO ≈ 200 mA, CL = 15 pF,
RL = 50 Ω, L See Figure 2		 7 12
VOH High level output voltage after switching VS = 20 V, IO 9 300 mA,
See Figure 2		 SN5545xB VS – 6.5 mV
SN7545xB VS – 6.5
(1) For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.
(2) All typical values are at VCC = 5 V, TA = 25°C.

7.6 Dissipation Ratings

PACKAGE TA ≤ 25°C
POWER RATING 		DERATING FACTOR
ABOVE TA = 25°C 		TA = 70°C
POWER RATING 		TA = 125°C
POWER RATING
D 725 mW 5.8 mW/°C 464 —
FK 1375 mW 11.0 mW/°C 880 275 mW
JG 1050 mW 8.4 mW/°C 672 210 mW
P 1000 mW 8.0 mW/°C 640 —

7.7 Typical Characteristics

SN55451B SN55452B SN55453B SN55454B SN75451B SN75452B SN75453B SN75454B graph_slrs021.gif Figure 1. Transistor Collector-Emitter Saturation Voltage vs Collector Current