SNLS666 January   2020 SN75LVPE4410

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 High Speed Electrical Characteristics
    7. 6.7 SMBUS/I2C Timing Charateristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Linear Equalization
      2. 7.3.2 DC Gain
      3. 7.3.3 Receiver Detect State Machine
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active PCIe Mode
      2. 7.4.2 Active Buffer Mode
      3. 7.4.3 Standby Mode
    5. 7.5 Programming
      1. 7.5.1 Control and Configuration Interface
        1. 7.5.1.1 Pin Mode
          1. 7.5.1.1.1 Four-Level Control Inputs
        2. 7.5.1.2 SMBUS/I2C Register Control Interface
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 PCIe x4 Lane Configuration
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDDABSMAX Supply Voltage (VDD) –0.5 4.0 V
VIOCMOS,ABSMAX 3.3 V LVCMOS and Open Drain I/O voltage –0.5 4.0 V
VIO4LVL,ABSMAX 4-level Input I/O voltage –0.5 2.75 V
VIOHS-RX,ABSMAX High-speed I/O voltage (RXnP, RXnN) –0.5 3.2 V
VIOHS-TX,ABSMAX High-speed I/O voltage (TXnP, TXnN) –0.5 2.75 V
TJ,ABSMAX Junction temperature 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.