SLES239A November   2008  – December 2016 TAS5352A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Audio Specifications (BTL)
    7. 6.7 Audio Specifications (Single-Ended Output)
    8. 6.8 Audio Specifications (PBTL)
    9. 6.9 Typical Characteristics
      1. 6.9.1 BTL Configuration
      2. 6.9.2 SE Configuration
      3. 6.9.3 PBTL Configuration
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 System Power-Up and Power-Down Sequence
        1. 7.3.1.1 Powering Up
        2. 7.3.1.2 Powering Down
      2. 7.3.2 Mid Z Sequence Compatibility
      3. 7.3.3 Error Reporting
      4. 7.3.4 Device Protection System
        1. 7.3.4.1 Use of TAS5352A in High-Modulation-Index Capable Systems
        2. 7.3.4.2 Overcurrent (OC) Protection With Current Limiting and Overload Detection
        3. 7.3.4.3 Pin-to-Pin Short-Circuit Protection (PPSC)
        4. 7.3.4.4 Overtemperature Protection
        5. 7.3.4.5 Undervoltage Protection (UVP) and Power-On-Reset (POR)
      5. 7.3.5 Device Reset
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protection MODE Selection Pins
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 BTL Application With AD Modulation Filters - 2N
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 PCB Material Recommendation
          2. 8.2.1.2.2 PVDD Capacitor Recommendation
          3. 8.2.1.2.3 Decoupling Capacitor Recommendations
        3. 8.2.1.3 Application Curves
      2. 8.2.2 BTL Application With AD Modulation Filters - 1N
        1. 8.2.2.1 Design Requirements
      3. 8.2.3 SE Application
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Application Curves
      4. 8.2.4 PBTL Application With AD Modulation Filters
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Application Curves
      5. 8.2.5 Non-Differential PBTL Application
        1. 8.2.5.1 Design Requirements
    3. 8.3 System Example
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD to AGND –0.3 13.2 V
GVDD_X to AGND –0.3 13.2 V
PVDD_X to GND_X (2) –0.3 53 V
OUT_X to GND_X (2) –0.3 53 V
BST_X to GND_X (2) –0.3 66.2 V
BST_X to GVDD_X (2) –0.3 53 V
VREG to AGND –0.3 4.2 V
GND_X to GND –0.3 0.3 V
GND_X to AGND –0.3 0.3 V
GND to AGND –0.3 0.3 V
PWM_X, OC_ADJ, M1, M2, M3 to AGND –0.3 4.2 V
RESET_X, SD, OTW to AGND –0.3 7 V
Maximum continuous sink current (SD, OTW) 9 mA
Minimum pulse duration, low 30 ns
Lead temperature, 1.6 mm (1/16 inch) from case (10 s) 260 °C
Maximum operating junction temperature, TJ 0 125 °C
Storage temperature, Tstg –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These voltages represent the DC voltage + peak AC waveform measured at the terminal of the device in all conditions.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
PVDD_X Half-bridge supply voltage 0 34.5 37 V
GVDD_X Supply voltage for logic regulators and gate-drive circuitry 10.8 12 13.2 V
VDD Digital regulator supply voltage 10.8 12 13.2 V
RL (BTL) Resistive load impedance (no cycle-by-cycle current control),
recommended demodulation filter		 3 4 Ω
RL (SE) Resistive load impedance (no cycle-by-cycle current control),
recommended demodulation filter		 2.25 3
RL (PBTL) Resistive load impedance (no cycle-by-cycle current control),
recommended demodulation filter		 1.5 2
LOutput (BTL) Output-filter inductance, minimum output inductance under short-circuit condition 5 10 μH
LOutput (SE) Output-filter inductance, minimum output inductance under short-circuit condition 5 10
LOutput (PBTL) Output-filter inductance, minimum output inductance under short-circuit condition 5 10
fS PWM frame rate 192 384 432 kHz
tLOW Minimum low-state pulse duration per PWM Frame, noise shaper enabled 30 nS
CPVDD PVDD close decoupling capacitors 0.1 μF
CBST Bootstrap capacitor,
selected value supports PWM frame rates from 192 kHz to 432 kHz 		33 nF
ROC Overcurrent programming resistor, resistor tolerance = 5% 22 22 47 kΩ
REXT-PULLUP External pullup resistor to 3.3 V to 5 V for SD or OTW 3.3 4.7 kΩ
TJ Junction temperature 0 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TAS5352A UNIT
DDV (HTSSOP)
44 PINS
RθJA Junction-to-ambient thermal resistance 41.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.7 °C/W
RθJB Junction-to-board thermal resistance 18 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 17.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

PVDD_x = 34.5 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, and fS = 384 kHz (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
VREG Voltage regulator
(only used as a reference node)		 VDD = 12 V 3 3.3 3.6 V
IVDD VDD supply current Operating, 50% duty cycle 7.2 17 mA
Idle, reset mode 5.5 11
IGVDD_X Gate supply current per half-bridge 50% duty cycle 8 16 mA
Reset mode 1 1.8
IPVDD_X Half-bridge idle current 50% duty cycle with 10-μH and 470-nF output filter 19 25 mA
Reset mode, no switching 525 630 μA
OUTPUT STAGE MOSFETS
RDSon,LS Drain-to-source resistance, low-side TJ = 25°C, excludes metalization resistance 80 89 mΩ
RDSon,HS Drain-to-source resistance, high-side TJ = 25°C, excludes metalization resistance 80 89 mΩ
I/O PROTECTION
Vuvp,G Undervoltage protection limit 9.5 V
Vuvp,hyst(1) Undervoltage protection limit 250 mV
BSTuvpF Puts device into RESET when BST voltage falls below limit 5.9 V
BSTuvpR Brings device out of RESET when BST voltage rises above limit 7 V
OTW(1) Overtemperature warning 115 125 135 °C
OTWHYST(1) Temperature drop needed below OTW temp. for OTW to be inactive after the OTW event 25 °C
OTE(1) Overtemperature error threshold 145 155 165 °C
OTE-OTWdifferential(1) OTE - OTW differential Temperature delta between OTW and OTE 30 °C
OLPC Overload protection counter fS = 384 kHz 1.25 ms
IOC Overcurrent limit protection Resistor—programmable, high-end, ROC = 22 kΩ with 1-mS pulse 10.9 A
IOCT Overcurrent response time 150 ns
tACTIVITY DETECTOR Time for PWM activity detector to activate when no PWM is present Lack of transition of any PWM input 13.2 μS
IPD Output pulldown current of each half-bridge Connected when RESET is active to provide bootstrap capacitor charge. Not used in SE mode. 3 mA
STATIC DIGITAL SPECIFICATIONS
VIH High-level input voltage PWM_A, PWM_B, PWM_C, PWM_D, M1, M2, M3, RESET_AB, RESET_CD 2 V
VIL Low-level input voltage 0.8 V
ILeakage Input leakage current 100 μA
OTW/SHUTDOWN (SD)
RINT_PU Internal pullup resistance, OTW to VREG, SD to VREG 20 26 32 kΩ
VOH High-level output voltage Internal pullup resistor 3 3.3 3.6 V
External pullup of 4.7 kΩ to 5 V 4.5 5
VOL Low-level output voltage IO = 4 mA 0.2 0.4 V
FANOUT Device fanout OTW, SD No external pullup 30 Devices
(1) Specified by design

6.6 Audio Specifications (BTL)

Audio performance is recorded as a chipset consisting of a TAS5518 PWM processor (modulation index limited to 97.7%) and a TAS5352A power stage. PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_x = 34.5 V, GVDD_x = 12 V, RL = 4 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, output filter: LDEM = 10 μH, CDEM = 470 nF (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POMAX Maximum power output RL = 4 Ω, 10% THD+N, clipped input signal 125 W
RL = 6 Ω, 10% THD+N, clipped input signal 100
RL = 8 Ω, 10% THD+N, clipped input signal 76
PO Unclipped power output RL = 4 Ω, 0 dBFS, unclipped input signal 96
RL = 6 Ω, 0 dBFS, unclipped input signal 72
RL = 8 Ω, 0 dBFS, unclipped input signal 57
THD+N Total harmonic distortion + noise 0 dBFS, AES17 filter 0.4%
1 W, AES17 filter 0.09%
Vn Output integrated noise A-weighted, AES17 filter, Auto mute disabled 50 μV
SNR Signal-to-noise ratio(1) A-weighted, AES17 filter, Auto mute disabled 110 dB
DNR Dynamic range A-weighted, input level = –60 dBFS, AES17 filter 110 dB
DC Offset Output offset voltage ±15 mV
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0 W, all half-bridges switching(2) 2.6 W
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.

6.7 Audio Specifications (Single-Ended Output)

Audio performance is recorded as a chipset consisting of a TAS5086 PWM processor (modulation index limited to 97.7%) and a TAS5352A power stage. PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_x = 34.5 V, GVDD_x = 12 V, RL = 4 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, output filter: LDEM = 20 μH, CDEM = 1 μF (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POMAX Maximum power output RL = 3 Ω, 10% THD+N, clipped input signal 45 W
RL = 4 Ω, 10% THD+N, clipped input signal 35
PO Unclipped power output RL = 3 Ω, 0 dBFS, unclipped input signal 35
RL = 4 Ω, 0 dBFS, unclipped input signal 25
THD+N Total harmonic distortion + noise 0 dBFS, AES17 filter 0.4%
1 W, AES17 filter 0.09%
Vn Output integrated noise A-weighted, AES17 filter, Auto mute disabled 40 μV
SNR Signal-to-noise ratio(1) A-weighted, AES17 filter, Auto mute disabled 109 dB
DNR Dynamic range A-weighted, input level = –60 dBFS, AES17 filter 109 dB
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0 W, all half-bridges switching(2) 2.6 W
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.

6.8 Audio Specifications (PBTL)

Audio performance is recorded as a chipset consisting of a TAS5518 PWM processor (modulation index limited to 97.7%) and a TAS5352A power stage. PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_x = 34.5 V, GVDD_x = 12 V, RL = 3 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, output filter: LDEM = 10 μH, CDEM = 1 μF (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POMAX Maximum power output RL = 3 Ω, 10% THD+N, clipped input signal 195 W
RL = 2 Ω, 10% THD+N, clipped input signal 250
PO Unclipped power output RL = 3 Ω, 0 dBFS, unclipped input signal 145
RL = 2 Ω, 0 dBFS, unclipped input signal 190
THD+N Total harmonic distortion + noise 0 dBFS, AES17 filter 0.4%
1 W, AES17 filter 0.09%
Vn Output integrated noise A-weighted, AES17 filter, Auto mute disabled 50 μV
SNR Signal-to-noise ratio(1) A-weighted, AES17 filter, Auto mute disabled 110 dB
DNR Dynamic range A-weighted, input level = –60 dBFS AES17 filter 110 dB
DC Offset Output offset voltage ±15 mV
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0 W, all half-bridges switching(2) 2.6 W
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.

6.9 Typical Characteristics

6.9.1 BTL Configuration

TAS5352A thd_nosie_les239_jh.gif Figure 1. Total Harmonic Distortion + Noise
vs Output Power
TAS5352A po_vdd_les239.gif Figure 3. Unclipped Output Power
vs Supply Voltage
TAS5352A ploss_v_po_les239.gif Figure 5. System Power Loss vs Output Power
TAS5352A amp_noise_v_f_les239.gif Figure 7. Noise Amplitude vs Frequency
TAS5352A gr2_les204_jh2.gif Figure 2. Output Power vs Supply Voltage
TAS5352A sys_v_po_les239.gif Figure 4. System Efficiency vs Output Power
TAS5352A sys_v_caset_les239.gif Figure 6. System Output Power
vs Case Temperature

6.9.2 SE Configuration

TAS5352A gr8_les229.gif Figure 8. Total Harmonic Distortion + Noise
vs Output Power
TAS5352A gr10_les239.gif Figure 10. Output Power vs Case Temperature
TAS5352A gr9_les239.gif Figure 9. Output Power vs Supply Voltage

6.9.3 PBTL Configuration

TAS5352A gr11_les239.gif Figure 11. Total Harmonic Distortion + Noise
vs Output Power
TAS5352A gr13_les239.gif Figure 13. System Output Power vs Case Temperature
TAS5352A gr12_les239.gif Figure 12. Output Power vs Supply Voltage