SLOS814D March   2014  – September 2016 TAS5421-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements for I2C Interface Signals
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Audio Input and Preamplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Gate Drive
      4. 7.3.4 Power FETs
      5. 7.3.5 Load Diagnostics
      6. 7.3.6 Protection and Monitoring
      7. 7.3.7 I2C Serial Communication Bus
        1. 7.3.7.1 I2C Bus Protocol
        2. 7.3.7.2 Random Write
        3. 7.3.7.3 Random Read
        4. 7.3.7.4 Sequential Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Hardware Control Pins
      2. 7.4.2 EMI Considerations
      3. 7.4.3 Operating Modes and Faults
    5. 7.5 Register Maps
      1. 7.5.1 I2C Address Register Definitions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Amplifier Output Filtering
        2. 8.2.1.2 Amplifier Output Snubbers
        3. 8.2.1.3 Bootstrap Capacitors
        4. 8.2.1.4 Analog Audio Input Filter
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Unused Pin Connections
          1. 8.2.2.1.1 MUTE Pin
          2. 8.2.2.1.2 STANDBY Pin
          3. 8.2.2.1.3 I2C Pins (SDA and SCL)
          4. 8.2.2.1.4 Terminating Unused Outputs
          5. 8.2.2.1.5 Using a Single-Ended Audio Input
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
      1. 10.2.1 Top Layer
      2. 10.2.2 Second Layer - Signal Layer
      3. 10.2.3 Third Layer - Power Layer
      4. 10.2.4 Bottom Layer - Ground Layer
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resource
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Power Supply Recommendations

A car battery that can have a large voltage range most commonly provides power for the device. PVDD, a filtered battery voltage, is the supply for the output FETs and the low-side FET gate driver. Good power-supply decoupling is necessary, especially at low voltage and temperature levels. To meet the PVDD specifications in the Electrical Characteristics section, TI uses 10-µF and 0.1-µF ceramic capacitors near the PVDD pin along with a larger bulk 330-µF electrolytic decoupling capacitor.

An internal linear regulator, which powers the analog circuitry, provides the voltage on the BYP pin. This supply requires an external bypass ceramic capacitor at the BYP pin.