SLAS844A May 2012 – January 2016 TAS5624A
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD to GND, GVDD_X(2) to GND | –0.3 | 13.2 | V | |
PVDD_X(2) to GND, OUT_X to GND, BST_X to GVDD_X(2) | –0.3 | 50 | V | |
BST_X to GND(3) | –0.3 | 62.5 | V | |
DVDD to GND | –0.3 | 4.2 | V | |
AVDD to GND | –0.3 | 8.5 | V | |
OC_ADJ, M1, M2, M3, C_START, INPUT_X to GND | –0.3 | 4.2 | V | |
RESET, FAULT, OTW, CLIP, to GND | –0.3 | 4.2 | V | |
Maximum continuous sink current (FAULT, OTW, CLIP) | 9 | mA | ||
Maximum operating junction temperature, TJ | 0 | 150 | °C | |
Lead temperature | 260 | 260 | °C | |
Storage temperature, Tstg | –40 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
PVDD_X | Full-bridge supply | DC supply voltage | 12 | 36 | 38 | V | |
GVDD_X | Supply for logic regulators and gate-drive circuitry | DC supply voltage | 10.8 | 12 | 13.2 | V | |
VDD | Digital regulator supply voltage | DC supply voltage | 10.8 | 12 | 13.2 | V | |
RL | Load impedance | BTL | Output filter: L = 10 uH, 1 µF. Output AD modulation, switching frequency > 350 kHz. |
2.5 | 4 | Ω | |
SE | 1.5 | 3 | |||||
PBTL | 1.5 | 2 | |||||
LOUTPUT | Output filter inductance | Minimum inductance at overcurrent limit, including inductor tolerance, temperature and possible inductor saturation | 5 | μH | |||
FPWM | PWM frame rate | 352 | 384 | 500 | kHz | ||
CPVDD | PVDD close decoupling capacitors | 0.44 | 1 | μF | |||
C_START | Start-up ramp capacitor | BTL and PBTL configuration | 100 | nF | |||
SE and 1 × BTL+ 2 × SE configuration | 1 | μF | |||||
ROC | Overcurrent programming resistor | Resistor tolerance = 5% | 24 | 33 | kΩ | ||
ROC_LATCHED | Overcurrent programming resistor | Resistor tolerance = 5% | 47 | 62 | 68 | kΩ | |
TJ | Junction temperature | 0 | 125 | °C |
THERMAL METRIC(1) | TAS5624A | UNIT | |
---|---|---|---|
DDV (HTSSOP) | |||
44 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 1.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 0.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 1.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 1.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION | ||||||
DVDD | Voltage regulator, only used as a reference node | VDD = 12 V | 3 | 3.3 | 3.6 | V |
AVDD | Voltage regulator, only used as a reference node | VDD = 12 V | 7.8 | V | ||
IVDD | VDD supply current | Operating, 50% duty cycle | 20 | mA | ||
Idle, reset mode | 20 | |||||
IGVDD_X | Gate-supply current per full-bridge | 50% duty cycle | 12 | mA | ||
Reset mode | 3 | |||||
IPVDD_X | Full-bridge idle current | 50% duty cycle without load | 15 | mA | ||
RESET low | 1.9 | |||||
VDD and GVDD_X at 0 V | 0.4 | |||||
OUTPUT-STAGE MOSFETs | ||||||
RDS(on), LS | Drain-to-source resistance, low-side (LS) | TJ = 25°C, excludes metallization resistance, GVDD = 12 V |
40 | mΩ | ||
RDS(on), HS | Drain-to-source resistance, high-side (HS) | 40 | mΩ | |||
I/O PROTECTION | ||||||
Vuvp,GVDD | Undervoltage protection limit, GVDD_X | 8.5 | V | |||
Vuvp,GVDD, hyst (1) | Undervoltage protection limit, GVDD_X | 0.7 | V | |||
Vuvp,VDD | Undervoltage protection limit, VDD | 8.5 | V | |||
Vuvp,VDD, hyst(1) | Undervoltage protection limit, VDD | 0.7 | V | |||
Vuvp,PVDD | Undervoltage protection limit, PVDD_X | 8.5 | V | |||
Vuvp,PVDD,hyst(1) | Undervoltage protection limit, PVDD_X | 0.7 | V | |||
OTW(1) | Overtemperature warning | 115 | 125 | 135 | °C | |
OTWhyst (1) | Temperature drop needed below OTW temperature for OTW to be inactive after OTW event. | 25 | °C | |||
OTE(1) | Overtemperature error | 145 | 155 | 165 | °C | |
OTE-OTWdifferential(1) | OTE-OTW differential | 30 | °C | |||
OTEHYST (1) | A device reset is needed to clear FAULT after an OTE event | 25 | °C | |||
OLPC | Overload protection counter | fPWM = 384 kHz | 2.6 | ms | ||
IOC | Overcurrent limit protection | Resistor-programmable, nominal peak current in 1-Ω load, ROC = 24 kΩ |
15 | A | ||
IOC_LATCHED | Overcurrent limit protection, latched | Resistor-programmable, nominal peak current in 1-Ω load, ROC = 62 kΩ |
15 | A | ||
IOCT | Overcurrent response time | Time from application of short condition to Hi-Z of affected half-bridge | 150 | ns | ||
IPD | Internal pulldown resistor at output of each half-bridge | Connected when RESET is active to provide bootstrap charge. Not used in SE mode. | 3 | mA | ||
STATIC DIGITAL SPECIFICATIONS | ||||||
VIH | High level input voltage | INPUT_X, M1, M2, M3, RESET | 1.9 | V | ||
VIL | Low level input voltage | 0.8 | V | |||
LEAKAGE | Input leakage current | 100 | μA | |||
OTW / SHUTDOWN (FAULT) | ||||||
RINT_PU | Internal pullup resistance, OTW, CLIP, FAULT to DVDD | 20 | 26 | 33 | kΩ | |
VOH | High level output voltage | Internal pullup resistor | 3 | 3.3 | 3.6 | V |
VOL | Low level output voltage | IO = 4 mA | 200 | 500 | mV | |
FANOUT | Device fanout OTW, FAULT, CLIP | No external pullup | 30 | devices |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Power output per channel | RL = 3 Ω, 10% THD+N | 200 | W | ||
RL = 4 Ω, 10% THD+N | 150 | |||||
RL = 3 Ω, 1% THD+N | 160 | |||||
RL = 4 Ω, 1% THD+N | 125 | |||||
THD+N | Total harmonic distortion + noise | 1-W, 1-kHz signal | 0.025% | |||
Vn | Output integrated noise | A-weighted, AES17 measuring filter | 180 | μV | ||
VOS | Output offset voltage | No signal | 10 | 20 | mV | |
SNR | Signal-to-noise ratio(1) | A-weighted, AES17 measuring filter | 105 | dB | ||
DNR | Dynamic range | A-weighted, –60 dBFS (rel 1% THD+N) | 105 | dB | ||
Pidle | Power dissipation due to idle losses (IPVDD_X) | PO = 0, channels switching(2) | 1 | W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Power output per channel | RL = 3 Ω, 10% THD+N | 50 | W | ||
RL = 3 Ω, 1% THD+N | 42 | |||||
THD+N | Total harmonic distortion + noise | 1-W, 1-kHz signal | 0.025% | |||
Vn | Output integrated noise | A-weighted, AES17 measuring filter | 180 | μV | ||
SNR | Signal-to-noise ratio(1) | A-weighted, AES17 measuring filter | 102 | dB | ||
DNR | Dynamic range | A-weighted, –60 dBFS (rel 1% THD+N) | 102 | dB | ||
Pidle | Power dissipation due to Idle losses (IPVDD_X) | PO = 0, channels switching(2) | 1 | W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Power output per channel | RL = 1.5 Ω, 10%, THD+N | 400 | W | ||
RL = 2 Ω, 10% THD+N | 300 | |||||
RL = 4 Ω, 10% THD+N | 160 | |||||
RL = 1.5 Ω, 1% THD+N | 320 | |||||
RL = 2 Ω, 1% THD+N | 250 | |||||
RL = 4 Ω, 1% THD+N | 130 | |||||
THD+N | Total harmonic distortion + noise | 1-W, 1-kHz signal | 0.025% | |||
Vn | Output integrated noise | A-weighted, AES17 measuring filter | 180 | μV | ||
VOS | Output offset voltage | No signal | 10 | 20 | mV | |
SNR | Signal-to-noise ratio(1) | A-weighted, AES17 measuring filter | 105 | dB | ||
DNR | Dynamic range | A-weighted, –60 dBFS (rel 1% THD) | 105 | dB | ||
Pidle | Power dissipation due to idle losses (IPVDD_X) | PO = 0, All channels switching(2) | 1 | W |
1 kHz |
4 Ω |