SCPS264B March   2017  – February 2020 TCA9800

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Integrated Current Source
      2. 9.3.2 Ultra-Low Power Consumption
      3. 9.3.3 No Static-Voltage Offset
      4. 9.3.4 Active-High Repeater Enable Input
      5. 9.3.5 Powered Off High Impedance I2C Bus Pins on A-Side
      6. 9.3.6 Powered-Off Back-Power Protection for I2C Bus Pins
      7. 9.3.7 Clock Stretching and Multiple Master Arbitration Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Operation Considerations
        1. 9.4.1.1 B-Side Input Low (VIL/IILC/RILC)
          1. 9.4.1.1.1 VILC & IILC
          2. 9.4.1.1.2 RILC
        2. 9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)
          1. 9.4.1.2.1 IEXT-I
          2. 9.4.1.2.2 IEXT-O
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Selection Guide
      2. 10.1.2 Special Considerations for the B-side
        1. 10.1.2.1 FET or Pass-Gate Translators
        2. 10.1.2.2 Buffered Translators/Level-shifters
    2. 10.2 Typical Application
      1. 10.2.1 Single Device
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering Without Level-Shifting
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Parallel Device Use Case
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Series Device Use Case
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedure
        3. 10.2.4.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.