SLLSFE5C March 2020 – December 2022 TCAN1463-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
CAN Driver Characteristics | |||||||
VO(D) | Dominant output voltage Bus biasing active |
CANH | TXD = 0 V, 50 ≤ RL ≤ 65 Ω, CL = open, RCM = open See Figure 8-1 and Figure 8-4 |
2.75 | 4.5 | V | |
CANL | 0.5 | 2.25 | V | ||||
VO(R) | Recessive output voltage Bus biasing active |
TXD = VIO, RL = open (no load), RCM = open See Figure 8-1 and Figure 8-4 |
2 | 3 | V | ||
VSYM | Driver symmetry Bus biasing active (VO(CANH) + VO(CANL) ) / VCC |
nSTB= VIO, RL = 60 Ω, CSPLIT = 4.7 nF, CL = Open, RCM = Open, TXD = 250 kHz, 1 MHz, 2.5 MHz See Figure 8-1 and Figure 8-4 |
0.9 | 1.1 | V/V | ||
VSYM_DC | DC Driver symmetry Bus biasing active VCC – VO(CANH) – VO(CANL) |
nSTB= VIO, RL = 60 Ω, CL = open See Figure 8-1 and Figure 8-4 |
–400 | 400 | mV | ||
VOD(DOM) | Differential output voltage Bus biasing active Dominant |
CANH - CANL | nSTB = VIO, TXD = 0 V, 50 Ω ≤ RL ≤ 65 Ω, CL = open See Figure 8-1 and Figure 8-4 |
1.5 | 3 | V | |
CANH - CANL | nSTB = VIO, TXD = 0 V, 45 Ω ≤ RL ≤ 70 Ω, CL = open See Figure 8-1 and Figure 8-4 |
1.4 | 3.3 | V | |||
CANH - CANL | nSTB = VIO, TXD = 0 V, RL = 2240 Ω, CL = open See Figure 8-1 and Figure 8-4 |
1.5 | 5 | V | |||
VOD(REC) | Differential output voltage Bus biasing active Recessive |
CANH - CANL | nSTB = VIO, TXD = VIO, RL = open Ω, CL = open See Figure 8-1 and Figure 8-4 |
–50 | 50 | mV | |
VOD(STB) | Differential output voltage Bus biasing inactive Recessive |
CANH | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.1 | 0.1 | V | |
CANL | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.1 | 0.1 | V | |||
CANH - CANL | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.2 | 0.2 | V | |||
IOS(DOM) | Short-circuit steady-state output current Bus biasing active Dominant |
nSTB = VIO, TXD = 0 V -15 V ≤ V(CANH) ≤ 40 V See Figure 8-1 and Figure 8-8 |
–100 | mA | |||
nSTB = VIO, TXD = 0 V -15 V ≤ V(CANL) ≤ 40 V See Figure 8-1 and Figure 8-8 |
100 | mA | |||||
IOS(REC) | Short-circuit steady-state output current Bus biasing active Recessive |
nSTB = VIO, VBUS = CANH = CANL -27 V ≤ VBUS ≤ 42 V See Figure 8-1 and Figure 8-8 |
–3 | 3 | mA | ||
RID(dom) | Differential input resistance in dominant phase | See Figure 9-2 | 40 | ohm | |||
RID(active_rec) | Differential input resistance in active recessive drive phase | See Figure 9-2 | 60 | ohm | |||
CAN Receiver Characteristics | |||||||
VIT(DOM) | Receiver dominant state input voltage range Bus biasing active |
nSTB = VIO, -12 V ≤ VCM ≤ 12 V See Figure 8-5 and Table 9-6 |
0.9 | 8 | V | ||
VIT(REC) | Receiver recessive state input voltage range Bus biasing active |
-3 | 0.5 | V | |||
VHYS | Hysteresis voltage for input threshold Bus biasing active |
nSTB = VIO See Figure 8-5 and Table 9-6 |
135 | mV | |||
VDIFF(DOM) | Receiver dominant state input voltage range Bus biasing inactive |
nSTB = 0 V, -12 V ≤ VCM ≤ 12 V See Figure 8-5 and Table 9-6 |
1.150 | 8 | V | ||
VDIFF(REC) | Receiver recessive state input voltage range Bus biasing inactive |
-3 | 0.4 | V | |||
VCM | Common mode range | nSTB = VIO See Figure 8-5 and Table 9-6 |
–12 | 12 | V | ||
IOFF(LKG) | Power-off (unpowered) bus input leakage current | VSUP = 0 V, CANH = CANL = 5 V | 2.5 | µA | |||
CI | Input capacitance to ground (CANH or CANL) (1) | TXD = VCC = VIO | 40 | pF | |||
CID | Differential input capacitance (1) | TXD = VCC = VIO | 20 | pF | |||
RID | Differential input resistance | TXD = VCC = VIO = 5 V, nSTB = 5 V -12 V ≤ VCM ≤ 12 V |
30 | 100 | kΩ | ||
RIN | Input resistance (CANH or CANL) | 15 | 50 | kΩ | |||
RIN(M) | Input resistance matching: [1 – RIN(CANH) / RIN(CANL)] × 100% |
V(CANH) = V(CANL) = 5 V | –3 | 3 | % | ||
RCBF | Valid differential load impedance range for bus fault circuitry | RCM = RL, CL = open | 45 | 70 | Ω | ||
TXD Characteristics | |||||||
VIH | High-level input voltage | 0.7 | VIO | ||||
VIL | Low-level input voltage | 0.3 | VIO | ||||
IIH | High-level input leakage current | TXD = VIO = 5.5 V | –2.5 | 1 | µA | ||
IIL | Low-level input leakage current | TXD = 0 V, VIO = 5.5 V | –115 | –2.5 | µA | ||
ILKG(OFF) | Unpowered leakage current | TXD = 5.5 V, VSUP = VIO = 0 V | –1 | 1 | µA | ||
RPU | Pull-up resistance to VIO | 40 | 60 | 80 | kΩ | ||
CI | Input Capacitance | VIN = 0.4 x sin(2 × π × 2 × 106 × t) + 2.5 V | 5 | pF | |||
RXD Characteristics | |||||||
VOH | High-level output voltage | IO = –2 mA See Figure 8-5 |
0.8 | VIO | |||
VOL | Low-level output voltage | IO = 2 mA See Figure 8-5 |
0.2 | VIO | |||
ILKG(OFF) | Unpowered leakage current | RXD = 5.5 V, VSUP = VIO = 0 V | -1 | 1 | µA | ||
nSTB Characteristics | |||||||
VIH | High-level input voltage | 0.7 | VIO | ||||
VIL | Low-level input voltage | 0.3 | VIO | ||||
IIH | High-level input leakage current | nSTB = VIO = 5.5 V | 0.5 | 115 | µA | ||
IIL | Low-level input leakage current | nSTB = 0 V, VIO = 5.5 V | –1 | 1 | µA | ||
ILKG(OFF) | Unpowered leakage current | nSTB = 5.5 V, VIO = 0 V | –1 | 1 | µA | ||
RPD | Pull-down resistance to GND | 40 | 60 | 80 | kΩ | ||
nFAULT Characteristics | |||||||
VOH | High-level output voltage | IO = -2
mA |
0.8 | VIO | |||
VOL | Low-level output voltage | IO = 2
mA |
0.2 | VIO | |||
ILKG(OFF) | Unpowered leakage current | nFAULT = 5.5 V, VIO = 0 V | –1 | 1 | µA | ||
INH_MASK Characteristics | |||||||
VIH | High-level input voltage | 0.7 | VIO | ||||
VIL | Low-level input voltage | 0.3 | VIO | ||||
IIH | High-level input leakage current | INH_MASK = VCC = VIO = 5.5 V | 0.5 | 115 | µA | ||
IIL | Low-level input leakage current | INH_MASK = 0 V, VCC = VIO = 5.5 V | -1 | 1 | µA | ||
ILKG(OFF) | Unpowered leakage current | INH_MASK = 5.5 V, VCC = VIO = 0 V | -1 | 1 | µA | ||
RPD | Pull-down resistance to GND (1) | 40 | 60 | 80 | kΩ | ||
EN Characteristics | |||||||
VIH | High-level input voltage | 0.7 | VIO | ||||
VIL | Low-level input voltage | 0.3 | VIO | ||||
IIH | High-level input leakage current | EN = VCC = VIO = 5.5 V | 0.5 | 115 | µA | ||
IIL | Low-level input leakage current | EN = 0 V, VCC = VIO = 5.5 V | -1 | 1 | µA | ||
ILKG(OFF) | Unpowered leakage current | EN = 5.5 V, VCC = VIO = 0 V | -1 | 1 | µA | ||
RPD | Pull-down resistance to GND | 40 | 60 | 80 | kΩ | ||
WAKE Characteristics | |||||||
VIH | High-level input voltage | Sleep mode | VSUP - 2 | V | |||
VIL | Low-level input voltage | VSUP - 3.5 | V | ||||
IIH | High-level input leakage current | WAKE = VSUP – 1 V | -3 | µA | |||
IIL | Low-level input leakage current | WAKE = 1 V | 3 | µA | |||
INH Characteristics | |||||||
ΔVH | High-level voltage drop from VSUP to INH (VSUP - VINH) | IINH = –6 mA | 0.5 | 1 | V | ||
ILKG(INH) | Sleep mode leakage current | INH = 0 V | –0.5 | 0.5 | µA | ||
RPD | Pull-down resistance | Sleep mode | 2.5 | 4 | 5.6 | MΩ |