9 Revision History
Changes from June 30, 2024 to December 13, 2024 (from Revision * (JUNE 2024) to Revision A (DECEMBER 2024))
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Global: Updated/Changed the document product status from "Advance Information" to "Production Data" ("AND" MECH variant package is now "Production Data")Go
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Global:: Added "(active-low)" and verified "O" Pin Type for the PMIC_WAKE0 and PMIC_WAKE1 signals, where applicable.Go
- (Features): Updated/Changed the CSI2.0 bullet and added sub-bulletsGo
- (Device Comparison): Updated/Changed, for clarity, the TDA4xPE associated footnotesGo
- (Pin Attributes): Added "VPE4 APE4" column information in the Pin Attributes (AND Package) tableGo
- (Pin Attributes): Added "VPE4 APE4" description in the Pin Attributes Header ListGo
- (DDRSS0 Signal Descriptions): Deleted the internal, reserved
signals.Go
- (SERDES0 Signal Descriptions): Added TDA4VPE4, TDA4APE4 signal availability footnoteGo
- (CPSW9X0 Signal Descriptions): Added TDA4VPE4, TDA4APE4 signal availability footnoteGo
- (USB0 Signal Descriptions): Added TDA4VPE4, TDA4APE4 signal availability footnoteGo
- (System Signal Descriptions): Added "(active low)" description to PMIC_WAKE0 and PMIC_WAKE1 pinsGo
- (Speed Grade Maximum Frequency): Updated/Changed the "VENCDEC" column values for Tdevice speeds in the tableGo
- (CSI2/DSI D-PHY Electrical Characteristics): Delete the table and added a compliance specifications NoteGo
- (SERDES Electrical Characteristics): Added USXGMII Note to show compliance with IEEE 802.3 Clause 72-7 and Annex 69BGo
- (Recommended Operating Conditions for OTP eFuse Programming): Added the SR(VPP), VPP Power-up Slew Rate parameter to clarify the limit associated with this parameter only applies during power-upGo
- (WKUP_OSC0 Internal Oscillator Clock Source): Updated/Changed the Cshunt, Crystal Circuit Shunt Capacitance content in the WKUP_OSC0 Crystal Electrical Characteristics tableGo
- (WKUP_OSC0 Internal Oscillator Clock Source): Added a footnote to define the MAX ESRxtal, Crystal Effective Series Resistance value based on the Cshunt, Crystal Circuit Shunt Capacitance parameter selectionGo
- (WKUP_OSC0 Switching Characteristics – Crystal Mode [Table]): Updated/Changed the XI, XO, and XI to XO capacitance MAX valuesGo
- (Auxiliary OSC1 Internal Oscillator Clock Source): Updated/Changed the Cshunt, Crystal Circuit Shunt Capacitance content in the OSC1 Crystal Electrical Characteristics tableGo
- (OSC1 Switching Characteristics – Crystal Mode [Table]): Updated/Changed the XI, XO, and XI to XO capacitance MAX table valuesGo
- (GPIO): Updated/Changed the lead-in content with just TRM and Signal Descriptions referencesGo
- (GPIO): Updated/Changed the SRI, Input slew rate, I2C OD FS MAX value from "0.8" to "0.08" V/ns in the GPIO Timing Conditions tabl bbeGo
- (I2C Timing): Updated/Changed the typo on the slew rate from "0.8" to "0.08" V/ns (which is equivalent to the stated value of 8E+7) on the rise and fall times of the I2C signals bulletGo
- (MCSPI Timing Requirements - Controller Mode): Updated/Changed the MIN value of SM1, tc(spiclk), Cycle time, SPI_CLK from "20.8" to "20" nsGo
- (MCSPI Switching Characteristics - Peripheral Mode): Updated/Changed the MIN value of SS1, tc(spiclk), Cycle time, SPI_CLK from "20.8" to "20" nsGo
- (MMC0 Timing Requirements – HS400 Mode): Added new table and associated timing imageGo
- (MMC0 Switching Characteristics – HS400 Mode): Replaced the Delay time parameters HS4008 and HS4009 with Output setup and Output hold parameters HS4008, HS4009, HS40010, and HS40011Go
- (eMMC in – HS400 Mode – Transmitter Mode): Updated the timing diagram to match the new definitions associated with parameters HS4008, HS4009, HS40010, and HS40011Go
- (OSPI Timing Conditions): Added Input slew rate 1.8V, PHY Data Training DDR with DQS row to tableGo
- (OSPI Timing Conditions): Updated "3.3V" and "All other modes" mode descriptionGo
- (OSPI0/1 With PHY Data Training): Added new sectionGo
- (OSPI Switching Characteristics – PHY SDR Mode): Corrected the formulas associated with timing parameters O10 and O11Go
- (OSPI Switching Characteristics – PHY DDR Mode): Corrected the formulas associated with timing parameters O4 and O5Go
- (OSPI0/1 Timing Requirements – Tap SDR Mode): Updated/Changed the constant values associated with the Setup time and Hold time MIN formulas in the O19 and O20 parametersGo
- (OSPI0/1 Timing Requirements – Tap SDR Mode): Updated/Changed the R= footnotes "refclk" to "reference clock" to match the clock name used in the Technical Reference Manual (TRM)Go
- (OSPI0/1 Timing Requirements – Tap DDR Mode): Updated/Changed the constant values associated with the Setup time and Hold time MIN formulas in the O13 and O14 parametersGo
- (OSPI0/1 Timing Requirements – Tap DDR Mode): Updated/Changed the R= footnotes "refclk" to "reference clock" to match the clock name used in the Technical Reference Manual (TRM)Go
- (OSPI0/1 Switching Characteristics – Tap DDR Mode): Updated/Changed the data output delay MIN and MAX formulas in the O6 parameter.Go
- (USB VBUS Design Guidelines): Updated/Changed USB VBUS Detect Voltage Divider
/ Clamp Circuit figureGo
- (System Power Supply Monitor Design Guidelines using VMON/POK): Updated/Changed "The VMON2_IR_VCPU pin …" paragraphGo
- (Device Nomenclature): Updated/Changed the device example to a true OPNGo
- (Standard Package Symbolization): Updated image to new markingsGo
- (Device Naming Convention): Updated/Changed the Nomenclature Description table to include new markings like the 2D reader addition, additional base part numbers, etc.Go