SLOS423K september   2003  – april 2023 THS3091 , THS3095

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±15 V
    6. 7.6 Electrical Characteristics: VS = ±5 V
    7. 7.7 Typical Characteristics: ±15 V
    8. 7.8 Typical Characteristics: ±5 V
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Down and Reference Pins Functionality
    4. 8.4 Device Functional Modes
      1. 8.4.1 Wideband, Noninverting Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD Design Considerations
          1. 9.4.1.1.1 PowerPAD Layout Considerations
        2. 9.4.1.2 Power Dissipation and Thermal Considerations
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics: VS = ±15 V

at TA ≅ 25°C, RF = 1.21 kΩ, RL = 100 Ω, and G = 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Small-signal bandwidth, –3 dB G = 1, RF = 1.78 kΩ,
VO = 200 mVPP		 DDA package 715 MHz
DGN package 600
G = 2, RF = 1.21 kΩ, VO = 200 mVPP 305
G = 5, RF = 1 kΩ, VO = 200 mVPP 205
G = 10, RF = 866 Ω, VO = 200 mVPP 190
0.1-dB bandwidth flatness VO = 200 mVPP 95 MHz
Large-signal bandwidth G = 5, RF = 1 kΩ , VO = 4 VPP 135 MHz
Slew rate (10% to 90% level) G = 2, VO = 10-V step, RF = 1.21 kΩ 3600 V/μs
G = 5, VO = 20-V step, RF = 1 kΩ 6000
Rise and fall time  VO = 5 VPP 2 ns
Settling time G = –2, VO = 2-VPP step to 0.1% 12.5 ns
to 0.01% 18.5
HARMONIC DISTORTION
2nd harmonic distortion  VO = 2 VPP, f = 10 MHz RL = 100Ω 72 dBc
RL = 1 kΩ 84
3rd harmonic distortion VO = 2 VPP, f = 10 MHz RL = 100 Ω 70 dBc
RL = 1 kΩ 99
Input voltage noise  f > 10 kHz 1.1 nV/√Hz
Noninverting input current noise  f > 10 kHz 15 pA/√Hz
Inverting input current noise f > 10 kHz 14 pA/√Hz
DC PERFORMANCE
Open-loop transimpedance VO = ±7.5 V, G = 1 TA = 25°C 350 1800 kΩ
TA = –40°C to +85°C 300
Input offset voltage  VCM = 0 V TA = 25°C 0.9 3 mV
TA = –40°C to +85°C 5
Noninverting input bias current VCM = 0 V TA = 25°C 4 15 μA
TA = –40°C to +85°C 20
Inverting input bias current VCM = 0 V TA = 25°C 3.5 15 μA
TA = –40°C to +85°C 25
Input offset current VCM = 0 V TA = 25°C 1.7 20 μA
TA = –40°C to +85°C 30
Average offset voltage drift VCM = 0 V, TA = –40°C to +85°C ±19 μV/°C
Average noninverting bias current drift VCM = 0 V, TA = –40°C to +85°C ±20 nA/°C
Average inverting bias current drift VCM = 0 V, TA = –40°C to +85°C ±80 nA/°C
Average offset current drift VCM = 0 V, TA = –40°C to +85°C ±80 nA/°C
INPUT CHARACTERISTICS
Common-mode input range TA = 25°C ±13.3 ±13.6 V
TA = –40°C to +85°C ±13
Common-mode rejection ratio VCM = ±10 V TA = 25°C 62 78 dB
TA = –40°C to +85°C 59
Noninverting input resistance 0.7 MΩ
Noninverting input capacitance 2.4 pF
Inverting input resistance 30 Ω
Inverting input capacitance 1.4 pF
OUTPUT CHARACTERISTICS
Output voltage swing RL = 1 kΩ TA = 25°C ±12.8 ±13.2 V
TA = –40°C to +85°C ±12.5
RL = 100 Ω TA = 25°C ±12.1 ±12.5
TA = –40°C to +85°C ±11.8
Output current Sourcing, RL = 40 Ω TA= 25°C 225 310 mA
TA = –40°C to +85°C 200
Sinking, RL = 40 Ω TA = 25°C 200 310
TA = –40°C to +85°C 175
Output impedance f = 1 MHz, closed loop 0.06 Ω
POWER SUPPLY
Quiescent current TA = 25°C 8.5 9.5 10.5 mA
TA = –40°C to +85°C 8 11
Power supply rejection +PSRR TA = 25°C 70 85 dB
TA = –40°C to +85°C 65
–PSRR TA = 25°C 68 82
TA = –40°C to +85°C 65
POWER-DOWN CHARACTERISTICS (THS3095 ONLY)
REF voltage range(1) VS– VS+ – 4 V
Power-down voltage level(1) Enable PD ≥ REF +2 V
Disable PD ≤ REF +0.8
Power-down quiescent current PD = 0 V TA = 25°C 500 700 μA
TA = –40°C to +85°C 800
PD bias current PD = 0 V, REF = 0 V, TA = 25°C 11 15 μA
TA = –40°C to +85°C 20
PD = 3.3 V, REF = 0 V TA = 25°C 11 15
TA = –40°C to +85°C 20
Turn-on time delay 90% of final value 60 μs
Turn-off time delay 10% of final value 150
(1) For detailed information on the behavior of the power-down circuit, see Section 8.3.1.