SBOS780C March   2016  – June 2021 THS3215

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: D2S
    6. 6.6  Electrical Characteristics: OPS
    7. 6.7  Electrical Characteristics: D2S + OPS
    8. 6.8  Electrical Characteristics: Midscale (DC) Reference Buffer
    9. 6.9  Typical Characteristics: D2S + OPS
    10. 6.10 Typical Characteristics: D2S Only
    11. 6.11 Typical Characteristics: OPS Only
    12. 6.12 Typical Characteristics: Midscale (DC) Reference Buffer
    13. 6.13 Typical Characteristics: Switching Performance
    14. 6.14 Typical Characteristics: Gain Drift
  7. Parameter Measurement Information
    1. 7.1 Overview
    2. 7.2 Frequency Response Measurement
    3. 7.3 Harmonic Distortion Measurement
    4. 7.4 Noise Measurement
    5. 7.5 Output Impedance Measurement
    6. 7.6 Step-Response Measurement
    7. 7.7 Feedthrough Measurement
    8. 7.8 Midscale Buffer ROUT Versus CLOAD Measurement
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Differential to Single-Ended Stage (D2S) With Fixed Gain of 2 V/V (Pins 2, 3, 6, and 14)
      2. 8.3.2 Midscale (DC) Reference Buffer (Pin 1 and Pin 15)
      3. 8.3.3 Output Power Stage (OPS) (Pins 4, 7, 9, 10, 11, and 12)
        1. 8.3.3.1 Output DC Offset and Drift for the OPS
        2. 8.3.3.2 OPS Harmonic Distortion (HD) Performance
        3. 8.3.3.3 Switch Feedthrough to the OPS
        4. 8.3.3.4 Driving Capacitive Loads
      4. 8.3.4 Digital Control Lines
    4. 8.4 Device Functional Modes
      1. 8.4.1 Full-Signal Path Mode
        1. 8.4.1.1 Internal Connection With Fixed Common-Mode Output Voltage
        2. 8.4.1.2 Internal Connection With Adjustable Common-Mode Output Voltage
        3. 8.4.1.3 External Connection
      2. 8.4.2 Dual-Output Mode
      3. 8.4.3 Differential I/O Voltage Mode
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Typical Applications
        1. 9.1.1.1 High-Frequency, High-Voltage, Dual-Output Line Driver for AWGs
          1. 9.1.1.1.1 Design Requirements
          2. 9.1.1.1.2 Detailed Design Procedure
          3. 9.1.1.1.3 Application Curves
        2. 9.1.1.2 High-Voltage Pulse-Generator
          1. 9.1.1.2.1 Design Requirements
          2. 9.1.1.2.2 Detailed Design Procedure
          3. 9.1.1.2.3 Application Curves
        3. 9.1.1.3 Single-Supply, AC-Coupled, Piezo Element Driver
          1. 9.1.1.3.1 Detailed Design Procedure
        4. 9.1.1.4 Output Common-Mode Control Using the Midscale Buffer as a Level Shifter
          1. 9.1.1.4.1 Detailed Design Procedure
        5. 9.1.1.5 Differential I/O Driver With independent Common-Mode Control
          1. 9.1.1.5.1 Detailed Design Procedure
  10. 10Power Supply Recommendations
    1. 10.1 Thermal Considerations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 TINA-TI (Free Software Download)
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics: OPS

at +VCC = 6.0 V, –VCC = –6.0 V, 25-Ω D2S source impedance, D2S input common-mode voltage (VIC) = 0.25 V, VREF = GND, RF = 249 Ω(1), RG = 162 Ω, AV = 2.5 V/V, OPS RLOAD = 100 Ω, OPS enabled (DISABLE ≤ 0.7 V or floated), external OPS input selected (PATHSEL ≥ 1.3 V), and TJ ≈ 25°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNITTEST LEVEL (2)
AC PERFORMANCE (4)
Small-signal bandwidth (SSBW)VOUT = 100 mVPP, peaking < 2.0 dB700MHzC
Large-signal bandwidth (LSBW)VOUT = 5 VPP270MHzC
Bandwidth for 0.2-dB flatnessVOUT = 5 VPP110MHzC
Slew rate(3)VOUT = 5-V step3000V/µsC
Overshoot and undershootInput tr = 1 ns, VOUT = 5-V step4%C
Rise and fall timeInput tr = 1 ns, VOUT = 5-V step1.7nsC
Settling time to 0.1%Input tr = 1 ns, VOUT = 5-V step25nsC
2nd-order harmonic distortion (HD2)f = 20 MHz, VOUT= 5 VPP–66dBcC
3rd-order harmonic distortion (HD3)f = 20 MHz, VOUT= 5 VPP–68dBcC
Noninverting input voltage noisef > 200 kHz2.7nV/√ HzC
Noninverting input current noisef > 200 kHz1.3pA/√ HzC
Inverting input current noisef > 200 kHz18pA/√ HzC
Closed-loop ac output impedancef = 20 MHz0.25ΩC
DC PERFORMANCE (4)
Open-loop transimpedance gain(1)VOUT = ±1 V, RLOAD= 500-Ω8001700A
Closed-loop gain0.1% external RF and RG resistors2.4952.5152.53V/VA
INPUT
External input offset voltage
(pin 9 to pin 12)
TJ ≈ 25°C–12±2.512mVA
TJ = 0°C to 70°C–1312.5mVB
TJ = –40°C to +125°C–14.113.7mVB
External input offset voltage drift
(pin 9 to pin 12)
TJ = –40°C to +125°C–3–12–21µV/°CB
Internal input offset voltage
(pin 6 to pin 12)
TJ ≈ 25°C–15±2.515mVA
TJ = 0°C to 70°C–15.715.4mVB
TJ = –40°C to +125°C–16.616mVB
Internal input offset voltage drift
(pin 6 to pin 12)
TJ = –40°C to +125°C–3–10–16µV/°CB
External to internal input offset voltage match–7±1.27mVC
External noninverting input bias current
(pin 9)(5)
TJ ≈ 25°C–5±515µAA
TJ = 0°C to 70°C–515.2µAB
TJ = –40°C to +125°C–5.215.4µAB
External noninverting input bias current drift (pin 9)TJ = –40°C to +125°C023.3nA/°CB
Inverting input bias current – either input selected(5)TJ ≈ 25°C–75±575µAA
TJ = 0°C to 70°C–3937µAB
TJ = –40°C to +125°C–43.540.5µAB
Inverting input bias current driftTJ = –40°C to +125°C–15–50–85nA/°CB
Input headroom to either supply2.63.0VA
Common-mode rejection ratio (CMRR)±3.4-V input range4553dBA
Noninverting input resistance1618.522.4A
Noninverting input capacitance3.3pFC
Open-loop inverting input impedance74ΩC
OUTPUT(6)
Output voltage headroom to either supplyRLOAD = 500 Ω, TJ ≈ 25°C1.31.41.6VA
RLOAD = 500 Ω, TJ = –40°C to +125°C1.8VB
Linear output current±1.7 V into 20-Ω RLOAD7590mAA
Peak output current±2.6-V into 20-Ω RLOAD120140mAA
DC output impedance0-V output, load current = ±40 mA0.05ΩC
Internal feedback resistor, RFBetween pins 11 and 121618.522.4A
PATHSEL (Pin 4; Logic Reference = Pin 7 = GND)
Input low logic levelInternal path selected0.70.9VA
Input high logic levelExternal input selected at VIN pin0.91.3VA
Input voltage range–0.5+VCCVA
PATHSEL voltage when floatedInternal input from D2S selected02040mVA
Input pin bias current(7)0-V input015µAA
3.3-V input–150–250µAA
Input pin impedance18 || 1.5kΩ || pFC
Switching timeTo 1% of final value80nsC
Input switching glitchBoth inputs at GND50mVC
Deselected input dc isolation± 2-V input7080dBA
Deselected input ac isolation2 VPP, at 20-MHz input5565dBC
DISABLE (Pin 10; Logic Reference = Pin 7 = GND)
Input low logic level0.70.9VA
Input high logic level0.91.3VA
Shutdown control voltage range–0.5+VCCVB
Shutdown voltage when floatedOutput stage enabled02040mVA
Input pin bias current(7)0-V input04µAA
3.3-V input–150–250µAA
Input pin impedance18 || 1.5kΩ || pFC
Switching time (turn on or off)To 10% of final value200nsC
Shutdown dc isolation (either input)±2-V input7080dBA
Shutdown ac isolation (either input)2 VPP at 20-MHz input5565dBC
POWER SUPPLY
Supply current (OPS only)±6-V supplies9.610.812mAA
Disabled supply current in OPS±6-V supplies1.522.9mAB
Logic reference current at pin 7(7)Pins 4, 7, and 10 held at 0 V200280380µAA
Positive power-supply rejection ratio (+PSRR)Referred to input5560dBA
Negative power-supply rejection ratio (–PSRR)Referred to input5356dBA
Output power stage includes an internal 18.5-kΩ feedback resistor. This internal resistor, in parallel with an external 249-Ω RF and 162-Ω RG, results in a gain of 2.5 V/V after including a nominal gain loss of 0.9935 V/V due to the input buffer and loop-gain effects.
Test levels (all values set by characterization and simulation): (A) 100% tested at TA≈ TJ≈ 25°C; over temperature limits by characterization and simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information. DC limits tested with no self-heating. Add internal self heating to TA for TJ.
This slew rate is the average of the rising and falling time estimated from the large-signal bandwidth as: (Vpeak / √ 2) × 2π × f–3dB.
Output measured at pin 11.
Currents out of pin treated as a positive polarity.
Output measured at pin 11.
Currents out of pin treated as a positive polarity.