SLOS265F August   1999  – July 2024 THS4021 , THS4022

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information - THS4021
    5. 5.5 Thermal Information - THS4022
    6. 5.6 Electrical Characteristics - THS4021D and THS4022DGN
    7. 5.7 Electrical Characteristics - THS4021DGN
    8. 5.8 Typical Characteristics: THS4021D and THS4022DGN
    9. 5.9 Typical Characteristics: THS4021DGN
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Offset Nulling
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving a Capacitive Load
      2. 7.1.2 General Configuration
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
        1. 7.3.1.1 General PowerPAD™ Integrated Circuit Package Design Considerations
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DGN|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Thermal Information - THS4022

THERMAL METRIC(1) THS4022 UNIT
DGN (HVSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 52 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 75.2 °C/W
RθJB Junction-to-board thermal resistance 24.5 °C/W
ΨJT Junction-to-top characterization parameter 4 °C/W
ΨJB Junction-to-board characterization parameter 24.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 9.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.