SLOS823D December 2012 – March 2020 THS4531A
PRODUCTION DATA.
The power down pin is internally connected to a CMOS stage which must be driven to a minimum of 2.1 V to ensure proper high logic.
If 1.8-V logic is used to drive the pin, a shoot through current of up to 100 µA may develop in the digital logic causing the overall quiescent current to exceed the 2 µA of maximum disabled quiescent current specified in the Electrical Characteristics: VS = 2.7 V.
To properly interface to 1.8-V logic with minimal increase in additional current draw, a logic-level translator like the SN74AVC1T45 device can be used.
Alternatively, the same function can be achieved using a diode and pullup resistor as shown in Figure 69.
The voltage at the power down pin will be a function of the supply voltage, input logic level, and diode drop. As long as the diode is forward biased, the power down voltage is calculated using Equation 3.
where
This means for 1.8-V logic, the forward voltage of the diode should be greater than 0.3 V but less than 0.7 V to keep the power down logic level above 2.1 V and less than 0.7 V respectively.
For example, if 1N914 is selected as the diode with a forward voltage of approximately 0.4 V, the translated logic voltages will be 0.4 V for disabled operation and 2.2 V for enabled operation.
Use Equation 4 to calculate the additional current draw.
Equation 2 shows that larger values of RPU result in a smaller additional current. A reasonable value of RPU is 500 kΩ where an additional current draw of 5.2 µA is expected while the device is in operation and 1.6 µA when disabled.