SLOSE89A November   2021  – March 2022 THS4541-DIE

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Bare Die Information
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Electrical Characteristics: (Vs+) - Vs- = 5 V
    4. 7.4 Typical Characteristics 5-V Single Supply
    5. 7.5 Typical Characteristics: 3-V to 5-V Supply Range
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Terminology and Application Assumptions
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Differential I/O
      2. 8.3.2 Power-Down Control Pin (PD)
        1. 8.3.2.1 Operating the Power Shutdown Feature
      3. 8.3.3 Input Overdrive Operation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation from Single-Ended Sources to Differential Outputs
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Interfacing to High-Performance ADCs
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 TINA Simulation Model Features
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • Y|0
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Bare Die Information

DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION BOND PAD DIMENSIONS (X x Y)
15 mils (381 μm) Silicon with backgrind Wafer backside is electrically isolated from active circuitry AlCu 85.0 μm × 85.0 μm
GUID-20210608-CA0I-QWHB-WTT9-GMX1KH8NT8FH-low.gif Figure 5-1 THS4541-DIE 24 Pad Die Diagram
Table 5-1 Bond Pad Coordinates in Microns
PAD NUMBER PAD NAME X-MIN Y-MIN X-MAX Y-MAX
1 DNC(1) 4.50 686.50 89.50 771.50
2 IN+ 4.50 590.50 89.50 675.50
3 DNC(1) 4.50 458.50 89.50 543.50
4 DNC(1) 4.50 363.50 89.50 448.50
5 IN- 4.50 231.50 89.50 316.50
6 DNC(1) 4.50 135.50 89.50 220.50
7 VOCM 283.85 4.50 368.85 89.50
8 DNC(1) 378.85 4.50 463.85 89.50
9 VS+ 473.85 4.50 558.85 89.50
10 DNC(1) 568.85 4.50 653.85 89.50
11 VS+ 663.85 4.50 748.85 89.50
12 DNC(1) 758.85 4.50 843.85 89.50
13 DNC(1) 1010.50 92.65 1095.50 177.65
14 OUT+ 1010.50 188.65 1095.50 273.65
15 DNC(1) 1010.50 363.50 1095.50 448.50
16 DNC(1) 1010.50 458.50 1095.50 543.50
17 OUT- 1010.50 633.35 1095.50 718.35
18 DNC(1) 1010.50 729.35 1095.50 814.35
19 DNC(1) 758.85 817.50 843.85 902.50
20 VS- 663.85 817.50 748.85 902.50
21 DNC(1) 568.85 817.50 653.85 902.50
22 VS- 473.85 817.50 558.85 902.50
23 DNC(1) 378.85 817.50 463.85 902.50
24 PD 283.85 817.50 368.85 902.50
(1) DNC pads are covered with passivation and cannot be used.