SBOS877A April   2018  – September 2018 THS6301

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      MTPR G.Fast 212 MHz (Bias 10, PAR = 15 dB, 1-in-64 Missing Tones)
      2.      Multitone Power Ratio (MTPR) Profile (G.Fast, 212 MHz, 8 dBm)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Power Dissipation and Thermal Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1.1 Power Dissipation and Thermal Considerations

For maximum performance and reliability, the designer must ensure that the design does not exceed a junction temperature of 125°C. Between 125°C and 150°C, damage does not occur, but the performance of the amplifier begins to degrade and long-term reliability suffers. The thermal characteristics of the device are dictated by the package and the PCB. Equation 1 calculates maximum power dissipation for a given package:

Equation 1. PD(MAX) = (TJ(MAX) – TA) / RθJA

where

  • PD(MAX) is the maximum power dissipation in the amplifier (W)
  • TJ(MAX) is the absolute maximum junction temperature (°C)
  • TA is the ambient temperature (°C)
  • RθJA = RθJC + RθCA
  • RθJC is the thermal coefficient from silicon transistors to the case (°C/W)
  • RθCA is the thermal coefficient from case to ambient temperature (°C/W)

For systems where heat dissipation is more critical, the THS6301 is offered in an 16-pin VQFN package with thermal pad. Because of the thermal pad, the thermal coefficient for the VQFN package is substantially improved over the traditional SOIC. The data for the VQFN packages with thermal pad assume a board layout that follows the thermal pad layout guidelines referenced in this section and detailed in the Quad Flatpack No-Lead Logic Packages application note. If the thermal pad is not soldered to the PCB, the thermal impedance increases substantially, which may cause serious heat and performance issues. Be sure to always solder the thermal pad to the PCB for optimum performance.

When determining whether or not the device satisfies the maximum power dissipation requirement, consider not only quiescent power dissipation, but also dynamic power dissipation. Often times, this dissipation is difficult to quantify because the signal pattern is inconsistent, but an estimate of the RMS power dissipation can provide visibility into a possible problem.