SLOS932 December   2015 THS7530-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Main Amplifier
    6. 6.6 Package Thermal Data
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Test Circuits
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Continually-Variable Gain Control
      2. 8.3.2 Common-Mode Voltage Control
      3. 8.3.3 Output Voltage Clamps
      4. 8.3.4 Power-Down Mode
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 2
    • Device CDM Classification Level C6
  • Low Noise: Vn = 1.1 nV/√Hz,
    Noise Figure = 9 dB
  • Low Distortion:
    • HD2 = –65 dBc, HD3 = –61 dBc at 32 MHz
    • IMD3 = –62 dBc, OIP3 = 21 dBm at 70 MHz
  • 300-MHz Bandwidth
  • Continuously Variable Gain Range: 11.6 dB
    to 46.5 dB
  • Gain Slope: 38.8 dB/V
  • Fully Differential Input and Output
  • Output Common-Mode Voltage Control
  • Output Voltage Limiting

2 Applications

  • Time Gain Amplifiers in Ultra Sound, Sonar,
    and Radar
  • Automatic Gain Control in Communication
    and Video
  • System Gain Calibration in Communications
  • Variable Gain in Instrumentation

3 Description

The THS7530-Q1 device is fabricated using Texas Instruments' state-of-the-art BiCom III SiGe complementary bipolar process. The THS7530-Q1 device is a DC-coupled, wide bandwidth amplifier with voltage-controlled gain. The amplifier has high-impedance differential inputs and low-impedance differential outputs with high-bandwidth gain control, output common-mode control, and output voltage clamping.

Signal-channel performance is exceptional with
300-MHz bandwidth, and third harmonic distortion of –61 dBc at 32 MHz with 1-VPP output into 400 Ω.

Gain control is linear in dB with 0 V to 0.9 V varying the gain from 11.6 dB to 46.5 dB with 38.8-dB/V gain slope.

Output voltage limiting is provided to limit the output voltage swing and to prevent saturating following stages.

The device is characterized for operation over the automotive temperature range, –40°C to +125°C.  

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
THS7530-Q1 HTSSOP (14) 5.00 mm × 4.40 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Typical Application Circuit

THS7530-Q1 fbd_los405.gif