SLLSF79B April   2021  – September 2021 THVD1439 , THVD1439V , THVD1449 , THVD1449V

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  ESD Ratings, IEC
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Power Dissipation
    7. 6.7  Electrical Characteristics
    8. 6.8  Switching Characteristics (THVD1439, THVD1439V)
    9. 6.9  Switching Characteristics (THVD1449, THVD1449V)
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Electrostatic Discharge (ESD) Protection
      2. 8.3.2 Electrical Fast Transient (EFT) Protection
      3. 8.3.3 Surge Protection
      4. 8.3.4 Enhanced Receiver Noise Immunity
      5. 8.3.5 Failsafe Receiver
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1 Electrostatic Discharge (ESD) Protection

The bus pins of the THVD14x9(V) transceiver family include on-chip ESD protection against ±15-kV HBM and ±15-kV IEC 61000-4-2 contact discharge. The International Electrotechnical Commission (IEC) ESD test is far more severe than the HBM ESD test. The 50% higher charge capacitance, C(S), and 78% lower discharge resistance, R(D), of the IEC model produce significantly higher discharge currents than the HBM model. As stated in the IEC 61000-4-2 standard, contact discharge is the preferred transient protection test method.

GUID-3941D20A-72A8-4DBD-BB91-068417C92BC8-low.gifFigure 8-3 HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis)

The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common discharge events occur because of human contact with connectors and cables.