SLVSA51E March 2010 – September 2016 TLC5940-EP
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage(3) | VCC | –0.3 | 6 | V | |
V(BLANK), V(DCPRG), V(SCLK), V(XLAT), V(SIN), V(GSCLK), V(IREF) | –0.3 | VCC + 0.3 | V | ||
Output voltage | V(SOUT), V(XERR) | –0.3 | VCC + 0.3 | V | |
V(OUT0) to V(OUT15) | –0.3 | 18 | V | ||
Output current (dc) | IO | 130 | mA | ||
EEPROM program | V(VPRG) | –0.3 | 24 | V | |
EEPROM write cycles | 25 | ||||
Package thermal impedance | See Thermal Information | ||||
Operating ambient temperature, TA | –40 | 125 | °C | ||
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 |
MIN | NOM | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
DC CHARACTERISTICS | |||||||
VCC | Supply Voltage | 3 | 5.5 | V | |||
VO | Voltage applied to output (OUT0–OUT15) | 17 | V | ||||
VIH | High-level input voltage | 0.8 VCC | VCC | V | |||
VIL | Low-level input voltage | GND | 0.2 VCC | V | |||
IOH | High-level output current | VCC = 5 V at SOUT | –1 | mA | |||
IOL | Low-level output current | VCC = 5 V at SOUT | 1 | mA | |||
IOLC | Constant output current | OUT0 to OUT15 | –40°C to 125°C | 72 | mA | ||
–40°C to 85°C, VCC < 3.6 V | 60 | ||||||
–40°C to 85°C, VCC > 3.6 V | 120 | ||||||
V(VPRG) | EEPROM program voltage | 20 | 22 | 23 | V | ||
TA | Operating free-air temperature | –40 | 125 | °C | |||
AC CHARACTERISTICS (2) | |||||||
f(SCLK) | Data shift clock frequency | SCLK | 30 | MHz | |||
f(GSCLK) | Grayscale clock frequency | GSCLK | 30 | MHz | |||
twh0/twl0 | SCLK pulse duration | SCLK = H/L (see Figure 12) | 16 | ns | |||
twh1/twl1 | GSCLK pulse duration | GSCLK = H/L (see Figure 12) | 16 | ns | |||
twh2 | XLAT pulse duration | XLAT = H (see Figure 12) | 20 | ns | |||
twh3 | BLANK pulse duration | BLANK = H (see Figure 12) | 20 | ns | |||
tsu0 | Setup time | SIN to SCLK ↑(1) (see Figure 12) | 5 | ns | |||
tsu1 | SCLK ↓ to XLAT ↑ (see Figure 12) | 10 | ns | ||||
tsu2 | VPRG ↑ ↓ to SCLK ↑ (see Figure 12) | 10 | ns | ||||
tsu3 | VPRG ↑ ↓XLAT ↑ (see Figure 12) | 10 | ns | ||||
tsu4 | BLANK ↓ to GSCLK ↑ (see Figure 12) | 10 | ns | ||||
tsu5 | XLAT ↑ to GSCLK ↑ (see Figure 12) | 30 | ns | ||||
tsu6 | VPRG ↑ to DCPRG ↑ (see Figure 17) | 1 | ms | ||||
th0 | Hold time | SCLK ↑ to SIN (see Figure 12) | 3 | ns | |||
th1 | XLAT ↓ to SCLK ↑ (see Figure 12) | 10 | ns | ||||
th2 | SCLK ↑ to VPRG ↑ ↓ (see Figure 12) | 10 | ns | ||||
th3 | XLAT ↓ to VPRG ↑ ↓ (see Figure 12) | 10 | ns | ||||
th4 | GSCLK ↑ to BLANK ↑ (see Figure 12) | 10 | ns | ||||
th5 | DCPRG ↓ to VPRG ↓ (see Figure 12) | 1 | ms | ||||
tprog | Programming time for EEPROM (see Figure 17) | 20 | ms |
THERMAL METRIC(1) | TLC5940-EP | UNIT | ||
---|---|---|---|---|
RHB (VQFN) | PWP (HTSSOP) | |||
32 PINS | 28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 36.7 | 34.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 18.9 | 36.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 15.9 | 8.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.6 | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 15.8 | 8.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.3 | 1.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | High-level output voltage | IOH = –1 mA, SOUT | VCC –0.5 | V | ||
VOL | Low-level output voltage | IOL = 1 mA, SOUT | 0.5 | V | ||
II | Input current | VI = VCC or GND; BLANK, DCPRG, GSCLK, SCLK, SIN, XLAT | –1 | 1 | µA | |
VI = GND; VPRG | –2 | 2 | ||||
VI = VCC; VPRG | 50 | |||||
VI = 21 V; VPRG; DCPRG = VCC | 4 | 10 | mA | |||
ICC | Supply current | No data transfer, all output OFF, VO = 1 V, R(IREF) = 10 kΩ |
0.9 | 6 | mA | |
No data transfer, all output OFF, VO = 1 V, R(IREF) = 1.3 kΩ |
5.2 | 12 | ||||
Data transfer 30 MHz, all output ON, VO = 1 V, R(IREF) = 1.3 kΩ |
16 | |||||
Data transfer 30 MHz, all output ON, VO = 1 V, R(IREF) = 640 Ω |
30 | |||||
IO(LC) | Constant sink current (see Figure 10) | All output ON, VO = 1 V, R(IREF) = 640 Ω, 25°C | 54 | 61 | 69 | mA |
All output ON, VO = 1 V, R(IREF) = 640 Ω, Full temperature | 42 | 61 | 72 | |||
Ilkg | Leakage output current | All output OFF, VO = 15 V, R(IREF) = 640 Ω, OUT0 to OUT15 |
±1 | µA | ||
ΔIO(LC0) | Constant sink current error (see Figure 10) | All output ON, VO = 1 V, R(IREF) = 640 Ω, OUT0 to OUT15, 25°C |
±4% | |||
All output ON, VO = 1 V, R(IREF) = 640 Ω, OUT0 to OUT15(1), Full temperature |
±12% | |||||
All output ON, VO = 1 V, R(IREF) = 1300 Ω, OUT0 to OUT15, 25°C |
±4% | |||||
All output ON, VO = 1 V, R(IREF) = 1300 Ω, OUT0 to OUT15(1), Full temperature |
±8% | |||||
ΔIO(LC1) | Constant sink current error (see Figure 10) | Device to device, Averaged current from OUT0 to OUT15, R(IREF) = 1920 Ω (20 mA)(2) | –2% | |||
0.4% | ||||||
ΔIO(LC2) | Constant sink current error (see Figure 10) | Device to device, Averaged current from OUT0 to OUT15, R(IREF) = 480 Ω (80 mA)(2) | –2.7% | |||
2% | ||||||
ΔIO(LC3) | Line regulation (see Figure 10) | All output ON, VO = 1 V, R(IREF) = 640 Ω OUT0 to OUT15(3), 25°C |
±4 | %/V | ||
All output ON, VO = 1 V, R(IREF) = 640 Ω OUT0 to OUT15(3), Full temperature |
±11 | |||||
All output ON, VO = 1 V, R(IREF) = 1300 Ω , OUT0 to OUT15(3), 25°C |
±4 | |||||
All output ON, VO = 1 V, R(IREF) = 1300 Ω, OUT0 to OUT15(3), Full temperature |
±4 | |||||
ΔIO(LC4) | Load regulation (see Figure 10) | All output ON, VO = 1 V to 3 V, R(IREF) = 640 Ω, OUT0 to OUT15(4), 25°C |
±6 | %/V | ||
All output ON, VO = 1 V to 3 V, R(IREF) = 640 Ω, OUT0 to OUT15(4), Full temperature |
±20 | |||||
All output ON, VO = 1 V to 3 V, R(IREF) = 1300 Ω, OUT0 to OUT15(4), 25°C |
±6 | |||||
All output ON, VO = 1 V to 3 V, R(IREF) = 1300 Ω, OUT0 to OUT15(4), Full temperature |
±6 | |||||
T(TEF) | Thermal error flag threshold | Junction temperature(5) | 150 | 170 | °C | |
V(LED) | LED open detection threshold | 0.3 | 0.4 | V | ||
V(IREF) | Reference voltage output |
R(IREF) = 640 Ω | 1.2 | 1.24 | 1.28 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tr0 | Rise time | SOUT | 16 | ns | ||
tr1 | OUTn, VCC = 5 V, TA = 60°C, DCn = 3 Fh | 10 | 30 | |||
tf0 | Fall time | SOUT | 16 | ns | ||
tf1 | OUTn, VCC = 5 V, TA = 60°C, DCn = 3 Fh | 10 | 30 | |||
tpd0 | Propagation delay time | SCLK to SOUT (see Figure 12) | 30 | ns | ||
tpd1 | BLANK to OUT0 | 60 | ns | |||
tpd2 | OUTn to XERR (see Figure 12 ) | 1000 | ns | |||
tpd3 | GSCLK to OUT0 (see Figure 12 ) | 60 | ns | |||
tpd4 | XLAT to IOUT (dot correction) (see Figure 12 ) | 60 | ns | |||
tpd5 | DCPRG to OUT0 (see Figure 12) | 30 | ns | |||
td | Output delay time | OUTn to OUT(n+1) (see Figure 12 ) | 20 | 30 | ns | |
ton-err | Output on-time error | touton– Tgsclk (see Figure 12), GSn = 01 h, GSCLK = 11 MHz | 10 | –50 | –90 | ns |