SLASEJ5B October 2017 – January 2020 TLC6C5816-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
V(POR-rising) | Power-on-reset rising threshold | 1.5 | 2.5 | V | |||
V(POR-falling) | Power-on-reset falling threshold | 1 | V | ||||
t(device-ready) | Device ready time | VCC > 0.5 V, EN = 0 | 50 | µs | |||
ICC | Logic supply current | All outputs off, no clock signal , EN = 0 | 60 | 120 | µA | ||
All outputs on, no clock signal, EN = 0 | 210 | 300 | |||||
ICC(FRQ) | Logic supply current at frequency | fSRCK = 5 MHz, CL = 30 pF, all outputs on | 320 | 600 | µA | ||
I(Q) | Quiescent current | EN = 1 | 1 | µA | |||
VOH | High-level output voltage SER OUT | IOH = –20 μA | 4.9 | 4.99 | V | ||
IOH = –4 mA | 4.5 | 4.69 | |||||
VOL | Low-level output voltage SER OUT | IOH = –20 μA | 0.001 | 0.01 | V | ||
IOH = –4 mA | 0.25 | 0.4 | |||||
IIH | High-level input current | VI = 5 V | 0.2 | µA | |||
IIL | Low-level input current | VI = 0 V | –0.2 | µA | |||
ID(SX) | Off-state drain current | VDS = 30 V | 0.01 | 0.1 | µA | ||
VDS = 30 V, TA = 125°C | 0.1 | 0.3 | |||||
rDS(on) | Static drain-source on-state resistance | VCC = 5 V, ID = 20 mA | TA = 25°C, single channel ON | 5 | 6.2 | 8 | Ω |
VCC = 3.3 V, ID = 20 mA | TA = 25°C, all channels ON | 6 | 7.3 | 9 | |||
TA = 125°C, all channels ON | 9 | 11.6 | 13.5 | ||||
T(SHUTDOWN) | Thermal shutdown threshold | 175 | °C | ||||
T(HYS) | Thermal shutdown hysteresis | 15 | °C | ||||
V(OC_th) | LED-open detection threshold | 4 | 4.3 | 4.5 | V | ||
Vhys(OC) | LED-open detection-threshold hysteresis | 60 | mV | ||||
V(SC_th) | LED-short detection threshold | 1 | 1.22 | 1.5 | V | ||
Vhys(SC) | LED-short detection-threshold hysteresis | 60 | mV | ||||
V(ERR_PD) | ERR pin open-drain voltage drop | IERR = 4 mA | 0.3 | V | |||
Ilkg(ERR) | ERR pin leakage current | VERR = 5 V | –1 | 1 | µA |