SLLSEZ8D December   2017  – June 2022 TLIN1022-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings - IEC
    4. 6.4 Thermal Information
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics (1)
    8. 6.8 Timing Requirements
    9. 6.9 Typical Characteristics
      1.      Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  LIN (Local Interconnect Network) Bus
        1. 7.3.1.1 LIN Transmitter Characteristics
        2. 7.3.1.2 LIN Receiver Characteristics
          1. 7.3.1.2.1 Termination
      2. 7.3.2  TXD (Transmit Input and Output)
      3. 7.3.3  RXD (Receive Output)
      4. 7.3.4  VSUP (Supply Voltage)
      5. 7.3.5  GND (Ground)
      6. 7.3.6  EN (Enable Input)
      7. 7.3.7  Protection Features
      8. 7.3.8  TXD Dominant Time Out (DTO)
      9. 7.3.9  Bus Stuck Dominant System Fault: False Wake Up Lockout
      10. 7.3.10 Thermal Shutdown
      11. 7.3.11 Under Voltage on VSUP
      12. 7.3.12 Unpowered Device and LIN Bus
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Standby Mode
      4. 7.4.4 Wake Up Events
        1. 7.4.4.1 Wake Up Request (RXD)
        2. 7.4.4.2 Mode Transitions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedures
        1. 8.2.2.1 Normal Mode Application Note
        2. 8.2.2.2 Standby Mode Application Note
        3. 8.2.2.3 TXD Dominant State Timeout Application Note
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Power Supply
VSUPOperational supply voltage (ISO/DIS 17987 Param 10)Device is operational beyond the LIN defined nominal supply voltage range See Figure 7-1 and Figure 7-2436V
VSUPNominal supply voltage (ISO/DIS 17987 Param 10): Normal Mode: Ramp VSUP while LIN signal is a 10 kHZ Square Wave with 50 % duty cycle and 18V swing. Normal and Standby Modes: Ramp VSUP while LIN signal is a 10 kHZ Square Wave with 50 % duty cycle and 36V swing. See Figure 7-1 and Figure 7-2436V
Sleep Mode436V
UVSUPUnder voltage VSUP threshold2.93.85V
UVHYSDelta hysteresis voltage for VSUP under voltage threshold0.2V
ISUPSupply CurrentNormal Mode: EN = High, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF See Figure 7-71.27.5mA
ISUPSupply CurrentStandby Mode: EN = Low, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF See Figure 7-71.13.75mA
ISUPSupply CurrentNormal Mode: EN = High, Bus Recessive: LIN = VSUP,6701300µA
ISUPSupply CurrentStandby Mode: EN = Low, Bus Recessive: LIN = VSUP,2040µA
ISUPSupply CurrentSleep Mode: 4.0 V < VSUP < 14 V, LIN = VSUP, EN = 0 V, TXD and RXD Floating1020µA
ISUPSupply CurrentSleep Mode: 14 V < VSUP < 36 V, LIN = VSUP, EN = 0 V, TXD and RXD Floating30µA
RXD OUTPUT PIN (OPEN DRAIN)
VOLOutput Low voltageBased upon External pull up to VCC0.6V
IOLLow level output current, open drainLIN = 0 V, RXD = 0.4 V1.5mA
IILGLeakage current, high-levelLIN = VSUP, RXD = 5 V–505µA
TXD INPUT PIN
VILLow level input voltage–0.30.8V
VIHHigh level input voltage25.5V
VHYSInput threshold voltage, normal modes& selective wake modes50500mV
IILGLow level input leakage currentTXD = Low–505µA
RTXDInternal pulldown resistor value125350800kΩ
EN INPUT PIN
VILLow level input voltage–0.30.8V
VIHHigh level input voltage25.5V
VHYSHysteresis voltageBy design and characterization50500mV
IILGLow level input currentEN = Low–505µA
RENInternal Pulldown resistor125350800kΩ
LIN PIN
VOHHigh level output voltageLIN recessive, TXD = high, IO = 0 mA, VSUP = 7 V to 36 V0.85VSUP
LIN recessive, TXD = high, IO = 0 mA, VSUP = 4 V ≤ VSUP < 7 V3.0V
VOLLow level output voltageLIN dominant, TXD = low, VSUP = 7 V to 36 V0.2VSUP
LIN dominant, TXD = low, VSUP = 4 V ≤ VSUP < 7 V1.2V
VSUP_NON_OPVSUP where Impact of recessive LIN Bus < 5% (ISO/DIS 17987 Param 11)TXD & RXD open LIN = 4 V to 45 V–0.345V
IBUS_LIMLimiting current (ISO/DIS 17987 Param 12)TXD = 0 V, VLIN = 36 V, RMEAS = 440 Ω, VSUP = 36 V, VBUSdom < 4.518 V See Figure 7-64090200mA
IBUS_PAS_domReceiver leakage current, dominant (ISO/DIS 17987 Param 13)LIN = 0 V, VSUP = 12 V Driver off/recessive See Figure 7-7–1mA
IBUS_PAS_rec1Receiver leakage current, recessive (ISO/DIS 17987 Param 14)LIN > VSUP, 8 V < VSUP < 36 V Driver off; See Figure 7-820µA
IBUS_PAS_rec2Receiver leakage current, recessive (ISO/DIS 17987 Param 14)LIN = VSUP, Driver off; See Figure 7-8–55µA
IBUS_NO_GNDLeakage current, loss of ground (ISO/DIS 17987 Param 15)GND = VSUP, 0 V ≤ VLIN ≤ 18 V, VSUP = 12 V; See Figure 7-9–11mA
IBUS_NO_BATLeakage current, loss of supply (ISO/DIS 17987 Param 16)0 V ≤ VLIN ≤ 36 V, VSUP = GND; See Figure 7-105µA
VBUSdomLow level input voltage (ISO/DIS 17987 Param 17)LIN dominant (including LIN dominant for wake up) See Figure 7-3 and Figure 7-40.4 VSUP
VBUSrecHigh level input voltage (ISO/DIS 17987 Param 18)Lin recessive See Figure 7-3 and Figure 7-40.6 VSUP
VBUS_CNTReceiver center threshold (ISO/DIS 17987 Param 19)VBUS_CNT = (VI_DOM + VI_REC)/2 See Figure 7-3 and Figure 7-40.4750.5 0.525 VSUP
VHYSHysteresis voltage (ISO/DIS 17987 Param 20)VHYS = (VI_REC - VI_DOM) See Figure 7-3 and Figure 7-40.175 VSUP
VSERIAL_DIODESerial diode LIN term pullup path (ISO/DIS 17987 Param 21)By design and characterization0.40.71V
RRESPONDERPullup resistor to VSUP (ISO/DIS 17987 Param 26)Normal and Standby modes204560kΩ
IRSLEEPPullup current source to VSUPSleep mode, VSUP = 14 V, LIN = GND–20–2µA
CLINPINCapacitance of LIN pinVSUP = 14 V25pF